TY - GEN
T1 - An overview of recent power semiconductor devices and their simulation
AU - Hernández, L.
AU - Claudio, A.
AU - Cotorogea, M.
AU - Macedonio, J.
PY - 2006
Y1 - 2006
N2 - Currently, power electronics designers ask for more precise power semiconductor device models. Models based on semiconductor physics offer a better option to accomplish these requirements. Other aspect is the availability of parameter extraction methods which frequently is complicated. This paper proposes a study of parameter extraction methods for semiconductor device models. From this analysis an automatic system for semiconductor devices characterization of parameter extraction is proposed.
AB - Currently, power electronics designers ask for more precise power semiconductor device models. Models based on semiconductor physics offer a better option to accomplish these requirements. Other aspect is the availability of parameter extraction methods which frequently is complicated. This paper proposes a study of parameter extraction methods for semiconductor device models. From this analysis an automatic system for semiconductor devices characterization of parameter extraction is proposed.
UR - http://www.scopus.com/inward/record.url?scp=46149098676&partnerID=8YFLogxK
U2 - 10.1109/CIEP.2006.312152
DO - 10.1109/CIEP.2006.312152
M3 - Contribución a la conferencia
AN - SCOPUS:46149098676
SN - 1424405459
SN - 9781424405459
T3 - International Power Electronics Congress - CIEP
SP - 120
EP - 125
BT - Proceedings 10th IEEE International Power Electronics Congress, CIEP 2006
T2 - 10th IEEE International Power Electronics Congress, CIEP 2006
Y2 - 16 October 2006 through 18 October 2006
ER -