TY - JOUR
T1 - Aluminum-doped zinc oxide (ZnO:Al) thin films deposited on glass substrates by chemical spray starting from zinc pentanedionate and aluminum chloride
AU - De La, M.
AU - Maldonado, A.
AU - Vega-Pérez, J.
AU - Solorza-Feria, O.
N1 - Funding Information:
The technical assistance of M.A. Luna, M. Avendaño, and A. Palafox is thanked. This work was partially supported by CONACyT , through Projects number 80502 and 80689 .
PY - 2010/10/25
Y1 - 2010/10/25
N2 - Aluminum-doped zinc oxide thin films (ZnO:Al) were deposited on sodalime glass substrates by the chemical spray technique, starting from zinc pentanedionate and aluminum chloride. The effect of the substrate temperature on the structural, morphological, optical, and electrical properties was studied. A constant [Al]/[Zn] = 3 at.% ratio was used. As the substrate temperature increases, the electrical resistance decreases, reaching a minimum value, in the order of 3 × 10-2 Ω cm, for as-grown films deposited at 475 °C. The Hall mobility and carrier concentration for these films were around 0.6 cm2/(V s), and 3.42 × 1020 cm -3, respectively. Further decrease in the resistivity, in the order of 1.5 × 10-2 Ω cm, was observed after a heat treatment in vacuum, during 1 h, at 400 °C. All the samples were polycrystalline, with a variation in the preferential growth. Samples deposited at 450 °C show a (0 0 2) preferential growth whereas films deposited at higher temperatures present a significant contribution of other planes. As the substrate temperature increases, the morphology shows slight changes, since the grain size increases. The transmittance in the visible region (400-700 nm) is high, typically of 85% at 550 nm, and band gap values oscillated around 3.3 eV. These results show that zinc pentanedionate can be a good candidate for the manufacturing of transparent conductive ZnO:Al thin films.
AB - Aluminum-doped zinc oxide thin films (ZnO:Al) were deposited on sodalime glass substrates by the chemical spray technique, starting from zinc pentanedionate and aluminum chloride. The effect of the substrate temperature on the structural, morphological, optical, and electrical properties was studied. A constant [Al]/[Zn] = 3 at.% ratio was used. As the substrate temperature increases, the electrical resistance decreases, reaching a minimum value, in the order of 3 × 10-2 Ω cm, for as-grown films deposited at 475 °C. The Hall mobility and carrier concentration for these films were around 0.6 cm2/(V s), and 3.42 × 1020 cm -3, respectively. Further decrease in the resistivity, in the order of 1.5 × 10-2 Ω cm, was observed after a heat treatment in vacuum, during 1 h, at 400 °C. All the samples were polycrystalline, with a variation in the preferential growth. Samples deposited at 450 °C show a (0 0 2) preferential growth whereas films deposited at higher temperatures present a significant contribution of other planes. As the substrate temperature increases, the morphology shows slight changes, since the grain size increases. The transmittance in the visible region (400-700 nm) is high, typically of 85% at 550 nm, and band gap values oscillated around 3.3 eV. These results show that zinc pentanedionate can be a good candidate for the manufacturing of transparent conductive ZnO:Al thin films.
KW - Chemical spray
KW - TCO
KW - Thin films
KW - Zinc oxide
UR - http://www.scopus.com/inward/record.url?scp=77956463859&partnerID=8YFLogxK
U2 - 10.1016/j.mseb.2010.03.074
DO - 10.1016/j.mseb.2010.03.074
M3 - Artículo
AN - SCOPUS:77956463859
SN - 0921-5107
VL - 174
SP - 42
EP - 45
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
IS - 1-3
ER -