TY - JOUR
T1 - A theoretical study of the vibrational properties of ultra-heavily doped semiconductors
AU - Castillo-Alvarado, F. L.
AU - Contreras Puente, G. S.
AU - Barrio, R. A.
PY - 1988/4/10
Y1 - 1988/4/10
N2 - A theory about the vibrations of semiconductor alloys is presented using the framework of the coherent potential approximation (CPA). Very simple self-consistent equations are obtained. A Born-type Hamiltonian was used in order to calculate the phonon density of states at a given site in real space. This CPA theory is applied to ultra-heavily doped n-type Ge in which the impurity density exceeds the normal solid solubility limits, giving rise to electrically active, as well as inactive, impurity ions. These calculations are in good agreement with Raman experimental data.
AB - A theory about the vibrations of semiconductor alloys is presented using the framework of the coherent potential approximation (CPA). Very simple self-consistent equations are obtained. A Born-type Hamiltonian was used in order to calculate the phonon density of states at a given site in real space. This CPA theory is applied to ultra-heavily doped n-type Ge in which the impurity density exceeds the normal solid solubility limits, giving rise to electrically active, as well as inactive, impurity ions. These calculations are in good agreement with Raman experimental data.
UR - http://www.scopus.com/inward/record.url?scp=84871331289&partnerID=8YFLogxK
U2 - 10.1088/0022-3719/21/10/008
DO - 10.1088/0022-3719/21/10/008
M3 - Artículo
SN - 0022-3719
VL - 21
SP - 1887
EP - 1893
JO - Journal of Physics C: Solid State Physics
JF - Journal of Physics C: Solid State Physics
IS - 10
ER -