TY - GEN
T1 - A prototype design for an accelerometer using a multiple floating-gate MOSFET as a transducer
AU - Domínguez-͆anchez, S.
AU - Reyes-Barranca, M. A.
AU - Abarca-Jiménez, S.
AU - Mendoza-Acevedo, S.
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014
Y1 - 2014
N2 - In this work, a design for a high G sensor is proposed demonstrating a novel transduction technique that can be fabricated with a standard 0:5m CMOS technology. No additional modifications to the fabrication steps are needed to achieve a MEMS (Micro-Electro-Mechanical System) accelerometer. The proposed system uses Multiple Input Floatinggate MOS transistors (MIFGMOS) as capacitive transduction elements. A variable capacitance is configured between fingers attached to the proof mass as one plate, and to the fixed structure, as the other plate. When acceleration is applied, this results in a modification of the floating gate voltage of the FGMOS, with a corresponding current change that can be correlated to acceleration. Also, a mechanical study was made with a given geometry structure, as well as an electrical analysis of the FGMOS transistor performance. Finally, a layout is proposed for the accelerometer system. Therefore, it is demonstrated that this design can be fabricated with the desired specifications through a standard CMOS technology. Additionally a novel transduction alternative compared to that used in conventional designs is demonstrated.
AB - In this work, a design for a high G sensor is proposed demonstrating a novel transduction technique that can be fabricated with a standard 0:5m CMOS technology. No additional modifications to the fabrication steps are needed to achieve a MEMS (Micro-Electro-Mechanical System) accelerometer. The proposed system uses Multiple Input Floatinggate MOS transistors (MIFGMOS) as capacitive transduction elements. A variable capacitance is configured between fingers attached to the proof mass as one plate, and to the fixed structure, as the other plate. When acceleration is applied, this results in a modification of the floating gate voltage of the FGMOS, with a corresponding current change that can be correlated to acceleration. Also, a mechanical study was made with a given geometry structure, as well as an electrical analysis of the FGMOS transistor performance. Finally, a layout is proposed for the accelerometer system. Therefore, it is demonstrated that this design can be fabricated with the desired specifications through a standard CMOS technology. Additionally a novel transduction alternative compared to that used in conventional designs is demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=84938766532&partnerID=8YFLogxK
U2 - 10.1109/ICEEE.2014.6978255
DO - 10.1109/ICEEE.2014.6978255
M3 - Contribución a la conferencia
AN - SCOPUS:84938766532
T3 - 2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2014
BT - 2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2014
Y2 - 29 September 2014 through 3 October 2014
ER -