A new type of structural defects in CdZnSe/ZnSe heterostructures

L. Borkovska; N. Korsunska; V. Kladko; M. Slobodyan; O. Yefanov; Ye Venger; T. Kryshtab; Yu Sadofyev; I. Kazakov

doi:10.1016/j.mejo.2007.07.040

A new type of structural defects in CdZnSe/ZnSe heterostructures

L. Borkovska, N. Korsunska, V. Kladko, M. Slobodyan, O. Yefanov, Ye Venger, T. Kryshtab, Yu Sadofyev, I. Kazakov

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The changes of structural and photoluminescence (PL) characteristics of MBE-grown CdZnSe/ZnSe single quantum well (QW) structures caused by Cd/Zn interdiffusion were studied by high-resolution X-ray diffraction (HRXRD) and low-temperature PL methods. The PL investigations showed that the increase of Cd content in the QW resulted in the increase of the depth of potential fluctuations in the QW as well as in the decrease of ZnSe cap layer band gap (up to several meV). The HRXRD scans as well as reciprocal space maps measured for symmetrical and asymmetrical diffractions revealed the formation of CdZnSe layers near the QW/ZnSe interface with Cd content of order of several percents. It is found that in some samples, the Cd profile in these layers is rather smooth while in others it is quite abrupt. In the latter case, the partial strain relaxation can occur in these layers.

Original language	English
Pages (from-to)	589-593
Number of pages	5
Journal	Microelectronics Journal
Volume	39
Issue number	3-4
DOIs	https://doi.org/10.1016/j.mejo.2007.07.040
State	Published - Mar 2008

Keywords

CdSe
HRXRD
MBE
PL
QW
ZnSe

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10.1016/j.mejo.2007.07.040

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title = "A new type of structural defects in CdZnSe/ZnSe heterostructures",

abstract = "The changes of structural and photoluminescence (PL) characteristics of MBE-grown CdZnSe/ZnSe single quantum well (QW) structures caused by Cd/Zn interdiffusion were studied by high-resolution X-ray diffraction (HRXRD) and low-temperature PL methods. The PL investigations showed that the increase of Cd content in the QW resulted in the increase of the depth of potential fluctuations in the QW as well as in the decrease of ZnSe cap layer band gap (up to several meV). The HRXRD scans as well as reciprocal space maps measured for symmetrical and asymmetrical diffractions revealed the formation of CdZnSe layers near the QW/ZnSe interface with Cd content of order of several percents. It is found that in some samples, the Cd profile in these layers is rather smooth while in others it is quite abrupt. In the latter case, the partial strain relaxation can occur in these layers.",

keywords = "CdSe, HRXRD, MBE, PL, QW, ZnSe",

author = "L. Borkovska and N. Korsunska and V. Kladko and M. Slobodyan and O. Yefanov and Ye Venger and T. Kryshtab and Yu Sadofyev and I. Kazakov",

year = "2008",

month = mar,

doi = "10.1016/j.mejo.2007.07.040",

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volume = "39",

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journal = "Microelectronics Journal",

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T1 - A new type of structural defects in CdZnSe/ZnSe heterostructures

AU - Borkovska, L.

AU - Korsunska, N.

AU - Kladko, V.

AU - Slobodyan, M.

AU - Yefanov, O.

AU - Venger, Ye

AU - Kryshtab, T.

AU - Sadofyev, Yu

AU - Kazakov, I.

PY - 2008/3

Y1 - 2008/3

N2 - The changes of structural and photoluminescence (PL) characteristics of MBE-grown CdZnSe/ZnSe single quantum well (QW) structures caused by Cd/Zn interdiffusion were studied by high-resolution X-ray diffraction (HRXRD) and low-temperature PL methods. The PL investigations showed that the increase of Cd content in the QW resulted in the increase of the depth of potential fluctuations in the QW as well as in the decrease of ZnSe cap layer band gap (up to several meV). The HRXRD scans as well as reciprocal space maps measured for symmetrical and asymmetrical diffractions revealed the formation of CdZnSe layers near the QW/ZnSe interface with Cd content of order of several percents. It is found that in some samples, the Cd profile in these layers is rather smooth while in others it is quite abrupt. In the latter case, the partial strain relaxation can occur in these layers.

AB - The changes of structural and photoluminescence (PL) characteristics of MBE-grown CdZnSe/ZnSe single quantum well (QW) structures caused by Cd/Zn interdiffusion were studied by high-resolution X-ray diffraction (HRXRD) and low-temperature PL methods. The PL investigations showed that the increase of Cd content in the QW resulted in the increase of the depth of potential fluctuations in the QW as well as in the decrease of ZnSe cap layer band gap (up to several meV). The HRXRD scans as well as reciprocal space maps measured for symmetrical and asymmetrical diffractions revealed the formation of CdZnSe layers near the QW/ZnSe interface with Cd content of order of several percents. It is found that in some samples, the Cd profile in these layers is rather smooth while in others it is quite abrupt. In the latter case, the partial strain relaxation can occur in these layers.

KW - CdSe

KW - HRXRD

KW - MBE

KW - PL

KW - QW

KW - ZnSe

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U2 - 10.1016/j.mejo.2007.07.040

DO - 10.1016/j.mejo.2007.07.040

M3 - Artículo

SN - 0026-2692

VL - 39

SP - 589

EP - 593

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 3-4

ER -

A new type of structural defects in CdZnSe/ZnSe heterostructures

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Keywords

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