A new method of making ohmic contacts to p-GaN

C. A. Hernández-Gutierrez; Yu Kudriavtsev; Esteban Mota; A. G. Hernández; A. Escobosa-Echavarría; V. Sánchez-Resendiz; Y. L. Casallas-Moreno; M. López-López

doi:10.1016/j.nimb.2016.11.001

A new method of making ohmic contacts to p-GaN

C. A. Hernández-Gutierrez, Yu Kudriavtsev, Esteban Mota, A. G. Hernández, A. Escobosa-Echavarría, V. Sánchez-Resendiz, Y. L. Casallas-Moreno, M. López-López

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The structural, chemical, and electrical characteristics of In⁺ ion-implanted Au/Ni, Au/Nb and Au/W ohmic contacts to p-GaN were investigated. After the preparation of Ni, Nb and W electrode on the surface of p-GaN, the metal/p-GaN contact interface was implanted by 30 keV In⁺ ions with an implantation dose of 5 × 10¹⁵ ions/cm² at room temperature to form a thin layer of In_xGa_1-xN located at the metal-semiconductor interface, achieved to reduce the specific contact resistance due to the improving quantum tunneling transport trough to the structure. The characterization was carried out by high-resolution X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectrometry to investigate the formation of ternary alloy, re-crystallization by rapid thermal annealing process after In⁺ implantation, and the redistribution of elements. The specific contact resistance was extracted by current-voltage (I-V) curves using transmission line method; the lowest specific contact resistance of 2.5 × 10⁻⁴ Ωcm² was achieved for Au/Ni/p-In_xGa_1-xN/p-GaN ohmic contacts.

Original language	English
Pages (from-to)	35-40
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	388
DOIs	https://doi.org/10.1016/j.nimb.2016.11.001
State	Published - 1 Dec 2016
Externally published	Yes

Keywords

Ion-implantation
Ohmic contact
Specific contact resistance
p-GaN

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10.1016/j.nimb.2016.11.001

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Hernández-Gutierrez, C. A., Kudriavtsev, Y., Mota, E., Hernández, A. G., Escobosa-Echavarría, A., Sánchez-Resendiz, V., Casallas-Moreno, Y. L., & López-López, M. (2016). A new method of making ohmic contacts to p-GaN. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 388, 35-40. https://doi.org/10.1016/j.nimb.2016.11.001

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title = "A new method of making ohmic contacts to p-GaN",

abstract = "The structural, chemical, and electrical characteristics of In+ ion-implanted Au/Ni, Au/Nb and Au/W ohmic contacts to p-GaN were investigated. After the preparation of Ni, Nb and W electrode on the surface of p-GaN, the metal/p-GaN contact interface was implanted by 30 keV In+ ions with an implantation dose of 5 × 1015 ions/cm2 at room temperature to form a thin layer of InxGa1-xN located at the metal-semiconductor interface, achieved to reduce the specific contact resistance due to the improving quantum tunneling transport trough to the structure. The characterization was carried out by high-resolution X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectrometry to investigate the formation of ternary alloy, re-crystallization by rapid thermal annealing process after In+ implantation, and the redistribution of elements. The specific contact resistance was extracted by current-voltage (I-V) curves using transmission line method; the lowest specific contact resistance of 2.5 × 10−4 Ωcm2 was achieved for Au/Ni/p-InxGa1-xN/p-GaN ohmic contacts.",

keywords = "Ion-implantation, Ohmic contact, Specific contact resistance, p-GaN",

author = "Hern{\'a}ndez-Gutierrez, {C. A.} and Yu Kudriavtsev and Esteban Mota and Hern{\'a}ndez, {A. G.} and A. Escobosa-Echavarr{\'i}a and V. S{\'a}nchez-Resendiz and Casallas-Moreno, {Y. L.} and M. L{\'o}pez-L{\'o}pez",

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year = "2016",

month = dec,

day = "1",

doi = "10.1016/j.nimb.2016.11.001",

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Hernández-Gutierrez, CA, Kudriavtsev, Y, Mota, E, Hernández, AG, Escobosa-Echavarría, A, Sánchez-Resendiz, V, Casallas-Moreno, YL & López-López, M 2016, 'A new method of making ohmic contacts to p-GaN', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 388, pp. 35-40. https://doi.org/10.1016/j.nimb.2016.11.001

TY - JOUR

T1 - A new method of making ohmic contacts to p-GaN

AU - Hernández-Gutierrez, C. A.

AU - Kudriavtsev, Yu

AU - Mota, Esteban

AU - Hernández, A. G.

AU - Escobosa-Echavarría, A.

AU - Sánchez-Resendiz, V.

AU - Casallas-Moreno, Y. L.

AU - López-López, M.

PY - 2016/12/1

Y1 - 2016/12/1

N2 - The structural, chemical, and electrical characteristics of In+ ion-implanted Au/Ni, Au/Nb and Au/W ohmic contacts to p-GaN were investigated. After the preparation of Ni, Nb and W electrode on the surface of p-GaN, the metal/p-GaN contact interface was implanted by 30 keV In+ ions with an implantation dose of 5 × 1015 ions/cm2 at room temperature to form a thin layer of InxGa1-xN located at the metal-semiconductor interface, achieved to reduce the specific contact resistance due to the improving quantum tunneling transport trough to the structure. The characterization was carried out by high-resolution X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectrometry to investigate the formation of ternary alloy, re-crystallization by rapid thermal annealing process after In+ implantation, and the redistribution of elements. The specific contact resistance was extracted by current-voltage (I-V) curves using transmission line method; the lowest specific contact resistance of 2.5 × 10−4 Ωcm2 was achieved for Au/Ni/p-InxGa1-xN/p-GaN ohmic contacts.

AB - The structural, chemical, and electrical characteristics of In+ ion-implanted Au/Ni, Au/Nb and Au/W ohmic contacts to p-GaN were investigated. After the preparation of Ni, Nb and W electrode on the surface of p-GaN, the metal/p-GaN contact interface was implanted by 30 keV In+ ions with an implantation dose of 5 × 1015 ions/cm2 at room temperature to form a thin layer of InxGa1-xN located at the metal-semiconductor interface, achieved to reduce the specific contact resistance due to the improving quantum tunneling transport trough to the structure. The characterization was carried out by high-resolution X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectrometry to investigate the formation of ternary alloy, re-crystallization by rapid thermal annealing process after In+ implantation, and the redistribution of elements. The specific contact resistance was extracted by current-voltage (I-V) curves using transmission line method; the lowest specific contact resistance of 2.5 × 10−4 Ωcm2 was achieved for Au/Ni/p-InxGa1-xN/p-GaN ohmic contacts.

KW - Ion-implantation

KW - Ohmic contact

KW - Specific contact resistance

KW - p-GaN

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U2 - 10.1016/j.nimb.2016.11.001

DO - 10.1016/j.nimb.2016.11.001

M3 - Artículo

AN - SCOPUS:84997283800

SN - 0168-583X

VL - 388

SP - 35

EP - 40

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

A new method of making ohmic contacts to p-GaN

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Keywords

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