TY - JOUR
T1 - White light emitting transparent double layer stack of Al2O3 :Eu 3+, Tb3+, and Ce3+ films deposited by spray pyrolysis
AU - Carmona-Téllez, S.
AU - Falcony, C.
AU - Aguilar-Frutis, M.
AU - Alarcón-Flores, G.
AU - García-Hipólito, M.
AU - Martínez-Martínez, R.
PY - 2013
Y1 - 2013
N2 - Aluminum oxide films doped with Tb, Ce and Eu have been deposited by spray pyrolysis using acetylacetonates as precursors. The photoluminescence emission for these films and for double layer stacks is reported. Eu and Tb doped films present the emissions associated with the radiative transitions among the electronic energy states of the triple ionized atom, being dominant the 5D0 to 7F2 at ∼ 612.5 nm for the Eu+3 ion, and the 5D4 to 7F 5 at ∼547.5 nm for the Tb+3 ion. In the case of Ce doped films, there are two broad bands associated also with the 5d to 4f transitions of this ion at∼400 and 510 nm. These films have low surface roughness lower than 3 nm, and thickness between 50 to 260 nm. The double layer stacks involved an initial Eu doped layer and a second Ce and Tb co-doped layer with different thicknesses. The films are transparent with an optical bandgap of approximately 5.63 eV, the photoluminescence of these stacks presented an overlap of the emissions corresponding to all the dopants when excited with 300 nm light, resulting in a white light emission.
AB - Aluminum oxide films doped with Tb, Ce and Eu have been deposited by spray pyrolysis using acetylacetonates as precursors. The photoluminescence emission for these films and for double layer stacks is reported. Eu and Tb doped films present the emissions associated with the radiative transitions among the electronic energy states of the triple ionized atom, being dominant the 5D0 to 7F2 at ∼ 612.5 nm for the Eu+3 ion, and the 5D4 to 7F 5 at ∼547.5 nm for the Tb+3 ion. In the case of Ce doped films, there are two broad bands associated also with the 5d to 4f transitions of this ion at∼400 and 510 nm. These films have low surface roughness lower than 3 nm, and thickness between 50 to 260 nm. The double layer stacks involved an initial Eu doped layer and a second Ce and Tb co-doped layer with different thicknesses. The films are transparent with an optical bandgap of approximately 5.63 eV, the photoluminescence of these stacks presented an overlap of the emissions corresponding to all the dopants when excited with 300 nm light, resulting in a white light emission.
UR - http://www.scopus.com/inward/record.url?scp=84887390606&partnerID=8YFLogxK
U2 - 10.1149/2.017306jss
DO - 10.1149/2.017306jss
M3 - Artículo
SN - 2162-8769
VL - 2
SP - R111-R115
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
IS - 6
ER -