@inproceedings{0b45023d0c98454abbb2994322a0bd72,
title = "Ultra-low noise strained Si/SiGe n- and Ge/SiGe p-MODFETs",
abstract = "Ultra-low noise and HF performances of Si/SiGe n- and Ge/SiGe p-MODFETs are presented and compared. A 130 nm n-MODFET yield de-embedded data like fT = 49 GHz, fMAX = 60 GHz, gmmax = 715 mS/mm and NFmin = 0.3 dB at 2.5 GHz. A 100 nm p-MODFET gave fT = 55 GHz, fMAX = 135 GHz, gmmax = 250 mS/mm, and NFmin = 0.5 dB at 2.5 GHz.",
author = "M. Enciso and F. Aniel and P. Crozat and L. Giguerre and R. Adde and M. Zeuner and G. H{\"o}ck and A. Fox",
note = "Publisher Copyright: {\textcopyright} 2001 Non IEEE.; 31st European Solid-State Device Research Conference, ESSDERC 2001 ; Conference date: 11-09-2001 Through 13-09-2001",
year = "2001",
doi = "10.1109/ESSDERC.2001.195296",
language = "Ingl{\'e}s",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "443--446",
editor = "Heiner Ryssel and Gerhard Wachutka and Herbert Grunbacher",
booktitle = "European Solid-State Device Research Conference",
address = "Estados Unidos",
}