TY - JOUR
T1 - The nature of the crystallization nuclei in Ge2Sb2Te5 alloys
AU - Morales-Sánchez, E.
AU - Prokhorov, E.
AU - Vorobiev, Yu
AU - González-Hernández, J.
N1 - Funding Information:
This work was partially supported by CONACyT of Mexico. The authors thank M. Hernandez-Landaverde and J.E. Urbina for their assistance with X-ray and EDS measurements.
PY - 2002/4
Y1 - 2002/4
N2 - Using two independent methods of investigation (impedance and X-ray diffraction measurements), it is shown that the crystallization process in amorphous Ge2Sb2Te5 thin films starts below the actual crystallization temperature Tc of this material. The nucleation centers, which appear at annealing temperatures around 120°C, are identified with the crystalline fcc Ge1Sb4Te7 phase. When the sample temperature increases above Tc, these nuclei are transformed into Ge2Sb2Te5 fcc crystals. The volume fraction of nuclei, their size and electric characteristics are found.
AB - Using two independent methods of investigation (impedance and X-ray diffraction measurements), it is shown that the crystallization process in amorphous Ge2Sb2Te5 thin films starts below the actual crystallization temperature Tc of this material. The nucleation centers, which appear at annealing temperatures around 120°C, are identified with the crystalline fcc Ge1Sb4Te7 phase. When the sample temperature increases above Tc, these nuclei are transformed into Ge2Sb2Te5 fcc crystals. The volume fraction of nuclei, their size and electric characteristics are found.
KW - A. Thin films
KW - D. Phase transition
KW - E. X-ray diffraction
UR - http://www.scopus.com/inward/record.url?scp=0036530774&partnerID=8YFLogxK
U2 - 10.1016/S0038-1098(02)00115-1
DO - 10.1016/S0038-1098(02)00115-1
M3 - Artículo
AN - SCOPUS:0036530774
SN - 0038-1098
VL - 122
SP - 185
EP - 188
JO - Solid State Communications
JF - Solid State Communications
IS - 3-4
ER -