Synthesis and characterization of nanostructured magnetoresistive Ni doped ZnO films

I. Montes-Valenzuela, G. Romero-Paredes, M. A. Vázquez-Agustín, R. Baca-Arroyo, R. Peña-Sierra

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

6 Citas (Scopus)

Resumen

We report a method to produce magnetic nanostructured semiconductor films based in ZnO doped with Nickel to control their magnetic properties. The method is based on a combined diffusion-oxidation process within a controlled atmosphere chamber to produce a uniform distribution of Ni ions in the ZnO films (ZnO:Ni). The synthesis of ZnO:Ni films is reported as well as the magnetoresistive characteristics, the used method yields films with reproducible and homogeneous properties. The films were also characterized structurally by X-Ray Diffraction (XRD) and Raman spectroscopy, and by Hall-van der Pauw measurements. The XRD measurements confirm the nanocrystalline films character. The films resulted of n-type conductivity with electron concentrations of ∼1020 cm-3 in average and carrier mobilities of 5 cm2/V s. The Magnetoresistance (MR) behavior of the films at 300 K shows negative changes of ΔR∼0.5% in accordance with the usual literature reports on samples produced by other methods.

Idioma originalInglés
Páginas (desde-hasta)185-189
Número de páginas5
PublicaciónMaterials Science in Semiconductor Processing
Volumen37
DOI
EstadoPublicada - 3 jun. 2015

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