TY - JOUR
T1 - Synthesis and characterization of nanostructured magnetoresistive Ni doped ZnO films
AU - Montes-Valenzuela, I.
AU - Romero-Paredes, G.
AU - Vázquez-Agustín, M. A.
AU - Baca-Arroyo, R.
AU - Peña-Sierra, R.
N1 - Publisher Copyright:
© 2015 Elsevier Ltd. All rights reserved.
PY - 2015/6/3
Y1 - 2015/6/3
N2 - We report a method to produce magnetic nanostructured semiconductor films based in ZnO doped with Nickel to control their magnetic properties. The method is based on a combined diffusion-oxidation process within a controlled atmosphere chamber to produce a uniform distribution of Ni ions in the ZnO films (ZnO:Ni). The synthesis of ZnO:Ni films is reported as well as the magnetoresistive characteristics, the used method yields films with reproducible and homogeneous properties. The films were also characterized structurally by X-Ray Diffraction (XRD) and Raman spectroscopy, and by Hall-van der Pauw measurements. The XRD measurements confirm the nanocrystalline films character. The films resulted of n-type conductivity with electron concentrations of ∼1020 cm-3 in average and carrier mobilities of 5 cm2/V s. The Magnetoresistance (MR) behavior of the films at 300 K shows negative changes of ΔR∼0.5% in accordance with the usual literature reports on samples produced by other methods.
AB - We report a method to produce magnetic nanostructured semiconductor films based in ZnO doped with Nickel to control their magnetic properties. The method is based on a combined diffusion-oxidation process within a controlled atmosphere chamber to produce a uniform distribution of Ni ions in the ZnO films (ZnO:Ni). The synthesis of ZnO:Ni films is reported as well as the magnetoresistive characteristics, the used method yields films with reproducible and homogeneous properties. The films were also characterized structurally by X-Ray Diffraction (XRD) and Raman spectroscopy, and by Hall-van der Pauw measurements. The XRD measurements confirm the nanocrystalline films character. The films resulted of n-type conductivity with electron concentrations of ∼1020 cm-3 in average and carrier mobilities of 5 cm2/V s. The Magnetoresistance (MR) behavior of the films at 300 K shows negative changes of ΔR∼0.5% in accordance with the usual literature reports on samples produced by other methods.
KW - Magnetic semiconductors
KW - Magnetoresistance
KW - Spintronics
KW - ZnO
UR - http://www.scopus.com/inward/record.url?scp=84930276552&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2015.02.067
DO - 10.1016/j.mssp.2015.02.067
M3 - Artículo
SN - 1369-8001
VL - 37
SP - 185
EP - 189
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
ER -