TY - JOUR
T1 - Synthesis and characterization of gallium nitride nanoparticles by using solvothermal-soft-chemical methodology
AU - Cruz-López, A.
AU - Manzo-Robledo, A.
AU - Vázquez-Cuchillo, O.
AU - Zanella, R.
AU - Gómez, R.
AU - Santoyo-Salazar, J.
AU - Campos-Badillo, A.
N1 - Publisher Copyright:
© 2014 Elsevier Ltd. All rights reserved.
PY - 2015/2
Y1 - 2015/2
N2 - GaN nanoparticles have been synthesized by solvothermal method. Gallium acetyl-acetonate and ammonium acetate were mixed in stoichiometry conditions. The reaction was induced in different solvents such as ethanol, ethylene glycol, propanol and benzene. The as-prepared materials were heat-treated from 240 to 950 °C. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) put in evidence that the resulting intrinsic-structure is highly linked with the solvent in turn and with temperature. It was found that wurzite phase is reached at 950 °C with benzene as a solvent; with surface area of 50 m2 g-1, measured by nitrogen physisorption. In addition, well-defined GaN-nanoparticles were determined using SEM-EDS and HRTEM for a diffraction-selected area (SAED). Moreover, optical properties obtained by using photoluminescence (PL) spectroscopy indicated a well crystal-definition from bands at 2.85 and 3.0 eV related with structural defects. GaN deposited onto an ITO substrate induced a more cathodic current corresponding to hydrogen evolution compared with ITO free of GaN in neutral conditions.
AB - GaN nanoparticles have been synthesized by solvothermal method. Gallium acetyl-acetonate and ammonium acetate were mixed in stoichiometry conditions. The reaction was induced in different solvents such as ethanol, ethylene glycol, propanol and benzene. The as-prepared materials were heat-treated from 240 to 950 °C. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) put in evidence that the resulting intrinsic-structure is highly linked with the solvent in turn and with temperature. It was found that wurzite phase is reached at 950 °C with benzene as a solvent; with surface area of 50 m2 g-1, measured by nitrogen physisorption. In addition, well-defined GaN-nanoparticles were determined using SEM-EDS and HRTEM for a diffraction-selected area (SAED). Moreover, optical properties obtained by using photoluminescence (PL) spectroscopy indicated a well crystal-definition from bands at 2.85 and 3.0 eV related with structural defects. GaN deposited onto an ITO substrate induced a more cathodic current corresponding to hydrogen evolution compared with ITO free of GaN in neutral conditions.
KW - Electro-catalysis
KW - Material science
KW - Nano-particles
KW - Non-oxide semiconductors
KW - Structural characterization
UR - http://www.scopus.com/inward/record.url?scp=84911123198&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2014.10.028
DO - 10.1016/j.mssp.2014.10.028
M3 - Artículo
SN - 1369-8001
VL - 30
SP - 435
EP - 441
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
ER -