Structural studies of ZnS thin films grown on GaAs by RF magnetron sputtering

V. L. Gayou; B. Salazar-Hernandez; M. E. Constantino; E. Rosendo Andrés; T. Díaz; R. Delgado Macuil; M. Rojas López

doi:10.1016/j.vacuum.2009.10.023

Structural studies of ZnS thin films grown on GaAs by RF magnetron sputtering

V. L. Gayou, B. Salazar-Hernandez, M. E. Constantino, E. Rosendo Andrés, T. Díaz, R. Delgado Macuil, M. Rojas López

Centro de Investigación en Biotecnología Aplicada (CIBA), Unidad Tlaxcala

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

52 Citas (Scopus)

Resumen

X-ray diffraction (XRD) studies of ZnS thin films grown on GaAs (001) substrates at different temperatures by rf magnetron sputtering have been carried out using CuKα radiation. XRD analysis reveals that deposited films below 335 °C, assumed the zinc blend structure. Samples annealed at above 335 °C showed mixed phases of the zinc blend and wurzite structures. Information about crystallite size is obtained from (001), (111) and (104) diffraction peaks. The average crystallite size of the film was determined to be ∼ 32 nm using the Scherrer formula.

Idioma original	Inglés
Páginas (desde-hasta)	1191-1194
Número de páginas	4
Publicación	Vacuum
Volumen	84
N.º	10
DOI	https://doi.org/10.1016/j.vacuum.2009.10.023
Estado	Publicada - 19 may. 2010

Acceder al documento

10.1016/j.vacuum.2009.10.023

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

@article{5b0a22ff36274e71b8a5ae7de0a78e92,

title = "Structural studies of ZnS thin films grown on GaAs by RF magnetron sputtering",

abstract = "X-ray diffraction (XRD) studies of ZnS thin films grown on GaAs (001) substrates at different temperatures by rf magnetron sputtering have been carried out using CuKα radiation. XRD analysis reveals that deposited films below 335 °C, assumed the zinc blend structure. Samples annealed at above 335 °C showed mixed phases of the zinc blend and wurzite structures. Information about crystallite size is obtained from (001), (111) and (104) diffraction peaks. The average crystallite size of the film was determined to be ∼ 32 nm using the Scherrer formula.",

keywords = "AFM, Nanoparticles, Sputtering, XRD, ZnS",

author = "Gayou, {V. L.} and B. Salazar-Hernandez and Constantino, {M. E.} and Andr{\'e}s, {E. Rosendo} and T. D{\'i}az and Macuil, {R. Delgado} and L{\'o}pez, {M. Rojas}",

year = "2010",

month = may,

day = "19",

doi = "10.1016/j.vacuum.2009.10.023",

language = "Ingl{\'e}s",

volume = "84",

pages = "1191--1194",

journal = "Vacuum",

issn = "0042-207X",

number = "10",

}

TY - JOUR

T1 - Structural studies of ZnS thin films grown on GaAs by RF magnetron sputtering

AU - Gayou, V. L.

AU - Salazar-Hernandez, B.

AU - Constantino, M. E.

AU - Andrés, E. Rosendo

AU - Díaz, T.

AU - Macuil, R. Delgado

AU - López, M. Rojas

PY - 2010/5/19

Y1 - 2010/5/19

N2 - X-ray diffraction (XRD) studies of ZnS thin films grown on GaAs (001) substrates at different temperatures by rf magnetron sputtering have been carried out using CuKα radiation. XRD analysis reveals that deposited films below 335 °C, assumed the zinc blend structure. Samples annealed at above 335 °C showed mixed phases of the zinc blend and wurzite structures. Information about crystallite size is obtained from (001), (111) and (104) diffraction peaks. The average crystallite size of the film was determined to be ∼ 32 nm using the Scherrer formula.

AB - X-ray diffraction (XRD) studies of ZnS thin films grown on GaAs (001) substrates at different temperatures by rf magnetron sputtering have been carried out using CuKα radiation. XRD analysis reveals that deposited films below 335 °C, assumed the zinc blend structure. Samples annealed at above 335 °C showed mixed phases of the zinc blend and wurzite structures. Information about crystallite size is obtained from (001), (111) and (104) diffraction peaks. The average crystallite size of the film was determined to be ∼ 32 nm using the Scherrer formula.

KW - AFM

KW - Nanoparticles

KW - Sputtering

KW - XRD

KW - ZnS

UR - http://www.scopus.com/inward/record.url?scp=77953325650&partnerID=8YFLogxK

U2 - 10.1016/j.vacuum.2009.10.023

DO - 10.1016/j.vacuum.2009.10.023

M3 - Artículo

SN - 0042-207X

VL - 84

SP - 1191

EP - 1194

JO - Vacuum

JF - Vacuum

IS - 10

ER -

Structural studies of ZnS thin films grown on GaAs by RF magnetron sputtering

Resumen

Acceder al documento

Otros archivos y enlaces

Huella

Citar esto