TY - JOUR
T1 - Stacked 2D nanoflake-structured thin films of chalcogenide SnSxSe(y−x) grown by spray pyrolysis
T2 - structural, optical and electrical properties
AU - Narro-Rios, J.
AU - Garduño-Wilches, I.
AU - Aguilar-Frutis, M.
AU - Sanchez-Juarez, A.
N1 - Publisher Copyright:
© 2020, Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2020/7/1
Y1 - 2020/7/1
N2 - In the present work, ternary SnSxSe(2−x) structures were synthesized as thin films by the spray pyrolysis technique. Structural, electrical and optical properties were studied as a function of the deposition temperature. XRD and EDS results showed the presence of the SnSxSe(2−x) phase in the films deposited at temperatures from 300 to 400 °C. The phase SnSSe was obtained at 400 °C and at higher deposition temperatures a mixture of the SnSxSe(2−x) and SnSxSe(1−x) phases becomes present in the samples. XRD also indicated a preferential growth along the (001) direction, and this result is corroborated with SEM images where nanometric flakes with the hexagonal form corresponding to the SnSxSe(2−x) phase were observed. An n-type conductivity was obtained by both Hall-Van der Pauw and Seebeck measurements in the films deposited from 300 to 400 °C. For films deposited at temperatures above 400 °C, a p-type conductivity was obtained in some samples. A Seebeck coefficient as high as 603 μV/K was obtained for the sample deposited at 400 °C. Bandgap energies were obtained from the transmittance and reflectance spectra. The bandgap varied from 2.44 to 1.04 eV, yielding a value of 1.28 eV for the SnSSe sample.
AB - In the present work, ternary SnSxSe(2−x) structures were synthesized as thin films by the spray pyrolysis technique. Structural, electrical and optical properties were studied as a function of the deposition temperature. XRD and EDS results showed the presence of the SnSxSe(2−x) phase in the films deposited at temperatures from 300 to 400 °C. The phase SnSSe was obtained at 400 °C and at higher deposition temperatures a mixture of the SnSxSe(2−x) and SnSxSe(1−x) phases becomes present in the samples. XRD also indicated a preferential growth along the (001) direction, and this result is corroborated with SEM images where nanometric flakes with the hexagonal form corresponding to the SnSxSe(2−x) phase were observed. An n-type conductivity was obtained by both Hall-Van der Pauw and Seebeck measurements in the films deposited from 300 to 400 °C. For films deposited at temperatures above 400 °C, a p-type conductivity was obtained in some samples. A Seebeck coefficient as high as 603 μV/K was obtained for the sample deposited at 400 °C. Bandgap energies were obtained from the transmittance and reflectance spectra. The bandgap varied from 2.44 to 1.04 eV, yielding a value of 1.28 eV for the SnSSe sample.
UR - http://www.scopus.com/inward/record.url?scp=85085384803&partnerID=8YFLogxK
U2 - 10.1007/s10854-020-03644-9
DO - 10.1007/s10854-020-03644-9
M3 - Artículo
AN - SCOPUS:85085384803
SN - 0957-4522
VL - 31
SP - 10930
EP - 10938
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 13
ER -