SiO2/PbTe quantum-dot multilayer production and characterization

E. Rodríguez, E. Jimenez, L. A. Padilha, A. A.R. Neves, G. J. Jacob, C. L. César, L. C. Barbosa

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38 Citas (Scopus)

Resumen

We report the fabrication of multilayer structures containing layers of PbTe quantum dots (QDs) spaced by 15-20 nm thick SiO2 layers. The QDs were grown by the laser ablation of a PbTe target using the second harmonic of Nd:YAG laser in an argon atmosphere. The SiO2 layers were fabricated by plasma chemical vapor deposition using tetramethoxysilane as a precursor. The influence of the ablation time on the size and size distribution of the QDs is studied by high-resolution transmission electron microscopy. Optical absorption measurements show clearly the QDs confinement effects.

Idioma originalInglés
Número de artículo113117
Páginas (desde-hasta)1-3
Número de páginas3
PublicaciónApplied Physics Letters
Volumen86
N.º11
DOI
EstadoPublicada - 14 mar. 2005
Publicado de forma externa

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