Resumen
The electronic properties of porous silicon (p-Si) are studied by means of a supercell model with a tight-binding Hamiltonian and sp3s* atomic orbitals. The pores are modelled as empty columns digged in a crystalline silicon structure, passivated with hydrogens atoms. In this work, the band structure and the density of sates of p-Si are presented for different porosities. The results show that the energy gap increases with porosity, together with a shift of the conduction band minimum towards the Γ point, as a consequence of the quantum confinement.
Idioma original | Español |
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Páginas (desde-hasta) | 155-157 |
Número de páginas | 3 |
Publicación | Revista Mexicana de Fisica |
Volumen | 45 |
N.º | SUPPL. 1 |
Estado | Publicada - jun. 1999 |
Palabras clave
- Electronic properties
- Porous silicon
- Tight-binding model