Sensitivity of Fermi level position at Ga-polar, N-polar, and nonpolar m-plane GaN surfaces to vacuum and air ambient

Lukasz Janicki, Manolo Ramírez-López, Jan Misiewicz, Grzegorz Cywiñski, Micha Bockowski, Grzegorz Muzio, Caroline Cheze, Marta Sawicka, Czesaw Skierbiszewski, Robert Kudrawiec

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Resumen

© 2016 The Japan Society of Applied Physics. Ga-polar, N-polar, and nonpolar m-plane GaN UN+ structures have been examined in air and vacuum ambient by contactless electroreflectance (CER). This technique is very sensitive to the surface electric field that varies with the Fermi level position at the surface. For UN+ GaN structures [i.e., GaN (undoped)/GaN (n-type)/substrate], a homogeneous built-in electric field is expected in the undoped GaN layer that is manifested by Franz-Keldysh oscillation (FKO) in CER spectra. A clear change in FKO has been observed in CER spectra for N-polar and nonpolar m-plane structures when changing from air to vacuum ambient. This means that those surfaces are very sensitive to ambient atmosphere. In contrast to that, only a small change in FKO can be seen in the Ga-polar structure. This clearly shows that the ambient sensitivity of the Fermi level position at the GaN surface varies with the crystallographic orientation and is very high for N-polar and nonpolar m-plane surfaces. This feature of the N-polar and nonpolar m-plane surfaces can be very important for GaN-based devices grown on these crystallographic orientations and can be utilized in some of the devices, e.g., sensors.
Idioma originalInglés estadounidense
DOI
EstadoPublicada - 1 may 2016
EventoJapanese Journal of Applied Physics -
Duración: 1 may 2016 → …

Conferencia

ConferenciaJapanese Journal of Applied Physics
Período1/05/16 → …

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    Janicki, L., Ramírez-López, M., Misiewicz, J., Cywiñski, G., Bockowski, M., Muzio, G., Cheze, C., Sawicka, M., Skierbiszewski, C., & Kudrawiec, R. (2016). Sensitivity of Fermi level position at Ga-polar, N-polar, and nonpolar m-plane GaN surfaces to vacuum and air ambient. Papel presentado en Japanese Journal of Applied Physics, . https://doi.org/10.7567/JJAP.55.05FA08