TY - JOUR
T1 - Schottky barrier diodes fabricated with metal oxides AgOx/IGZO
AU - Santana, L. A.
AU - Reséndiz, L. M.
AU - Díaz, A. I.
AU - Hernandez-Cuevas, F. J.
AU - Aleman, M.
AU - Hernandez-Como, N.
N1 - Publisher Copyright:
© 2019 Elsevier B.V.
PY - 2020/2/15
Y1 - 2020/2/15
N2 - In this work, Schottky barrier diodes were fabricated using silver oxide (AgOx) as the Schottky contact and amorphous indium gallium zinc oxide (a-IGZO) as the n-type semiconductor. The devices were fabricated with four photolithography steps on glass substrates. The materials used for the fabrication were: 150 nm thick Indium tin oxide (ITO) as the cathode, a 45 nm thick IGZO layer deposited by sputtering, a 500 nm thick SU-8 layer as passivation layer, a 40 nm thick AgOx layer deposited by reactive sputtering and a 70 nm thick Au capping layer deposited by e-beam evaporation as the anode. The fabricated Schottky barrier diodes area was 80um x 160um. From the current-voltage characteristics, based on thermionic emission theory, the following electrical parameters were obtained: an ideality factor of 1.71 ± 0.14, a rectification ratio of 1.38 × 109, a Schottky barrier height of 1.14 ± 0.01 eV, and a saturation current density of 4.5 × 10−13 A/cm2.
AB - In this work, Schottky barrier diodes were fabricated using silver oxide (AgOx) as the Schottky contact and amorphous indium gallium zinc oxide (a-IGZO) as the n-type semiconductor. The devices were fabricated with four photolithography steps on glass substrates. The materials used for the fabrication were: 150 nm thick Indium tin oxide (ITO) as the cathode, a 45 nm thick IGZO layer deposited by sputtering, a 500 nm thick SU-8 layer as passivation layer, a 40 nm thick AgOx layer deposited by reactive sputtering and a 70 nm thick Au capping layer deposited by e-beam evaporation as the anode. The fabricated Schottky barrier diodes area was 80um x 160um. From the current-voltage characteristics, based on thermionic emission theory, the following electrical parameters were obtained: an ideality factor of 1.71 ± 0.14, a rectification ratio of 1.38 × 109, a Schottky barrier height of 1.14 ± 0.01 eV, and a saturation current density of 4.5 × 10−13 A/cm2.
KW - IGZO
KW - Schottky barrier diode
KW - Silver oxide
UR - http://www.scopus.com/inward/record.url?scp=85074449487&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2019.111182
DO - 10.1016/j.mee.2019.111182
M3 - Artículo
AN - SCOPUS:85074449487
SN - 0167-9317
VL - 220
JO - Microelectronic Engineering
JF - Microelectronic Engineering
M1 - 111182
ER -