Raman scattering studies of Te doped In<inf>0.14</inf>Ga <inf>0.86</inf>As<inf>0.13</inf>Sb<inf>0.87</inf> alloys grown on GaSb by liquid phase epitaxy

J. Díaz-Reyes, E. López-Cruz, J. G. Mendoza-Álvarez, S. Jiḿnez-Sandoval

Resultado de la investigación: Contribución a una revistaArtículo

7 Citas (Scopus)

Resumen

Using the liquid phase epitaxy technique under supercooling conditions we have grown In0.14 Ga0.86 As0.13 Sb0.87 layers doped with tellurium lattice-matched to (100) n-GaSb. Layers doped with Te were accomplished by incorporating Sb2 Te3 pellets into the growth melt in the range from 6.48× 10-6 M to 4.31× 10-4 M. Using Raman spectroscopy we characterized the structural quality. Two main bands are observed in the Raman spectra centered at 230 and 245 cm-1 which depend strongly on the molar concentration of Sb2 Te3. The assignation of the observed vibrational modes to GaAs-like and to (GaSb+InAs) -like mixture modes is discussed using the random-element isodisplacement (REI) model. The REI model seems to describe the observed behavior of vibrational modes reasonably. © 2006 American Institute of Physics.
Idioma originalInglés estadounidense
PublicaciónJournal of Applied Physics
DOI
EstadoPublicada - 1 dic 2006

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