TY - JOUR
T1 - Pressure induced directional transformations on close spaced vapor transport deposited SnS thin films
AU - Andrade-Arvizu, Jacob A.
AU - García-Sánchez, M. F.
AU - Courel-Piedrahita, M.
AU - Santoyo-Morales, J.
AU - Jiménez-Olarte, D.
AU - Albor-Aguilera, M.
AU - Vigil-Galán, O.
N1 - Publisher Copyright:
© 2016 Elsevier Ltd
PY - 2016/11/15
Y1 - 2016/11/15
N2 - In this work, SnS thin films were deposited by employing the Close Spaced Vapor Transport (CSVT) technique under air atmosphere. Single-phase, p-type SnS thin films were synthesized by varying the final pressure in the chamber and its effect on the properties of SnS were studied. The pressure impact on the directional preferred orientation (DPO) of grains is presented for the first time. The analysis of different pressure values on deposited film properties was performed by X-ray diffraction analysis, Raman spectroscopy, scanning electron microscopy, atomic force microscopy, optical measurements and electric characterization techniques.
AB - In this work, SnS thin films were deposited by employing the Close Spaced Vapor Transport (CSVT) technique under air atmosphere. Single-phase, p-type SnS thin films were synthesized by varying the final pressure in the chamber and its effect on the properties of SnS were studied. The pressure impact on the directional preferred orientation (DPO) of grains is presented for the first time. The analysis of different pressure values on deposited film properties was performed by X-ray diffraction analysis, Raman spectroscopy, scanning electron microscopy, atomic force microscopy, optical measurements and electric characterization techniques.
KW - CSVT
KW - Chamber pressure variations
KW - Physical properties
KW - SnS thin films
UR - http://www.scopus.com/inward/record.url?scp=84983528087&partnerID=8YFLogxK
U2 - 10.1016/j.matdes.2016.08.047
DO - 10.1016/j.matdes.2016.08.047
M3 - Artículo
SN - 0264-1275
VL - 110
SP - 878
EP - 887
JO - Materials and Design
JF - Materials and Design
ER -