Preparation of nanostructured Al2O3-TiO2 composite films by MOCVD

J. A.Galaviz Pérez; J. A.Montes de Oca Valero; J. R.Vargas García; H. J.Dorantes Rosales

doi:10.1016/j.jallcom.2009.10.200

Preparation of nanostructured Al₂O₃-TiO₂ composite films by MOCVD

J. A.Galaviz Pérez, J. A.Montes de Oca Valero, J. R.Vargas García, H. J.Dorantes Rosales

Escuela Superior de Ingeniería Química e Industrias Extractivas (ESIQIE)

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

9 Citas (Scopus)

Resumen

Nanostructured Al₂O₃-TiO₂ composite films were prepared on glass substrates by metalorganic chemical vapor deposition (MOCVD) using aluminum acetylacetonate and titanium tetraisopropoxide precursors. Oxygen and argon were used as the reactive and carrier gases, respectively. Deposition temperature (T_dep) was varied from 723 to 873 K and total pressure was kept constant at 133-266 Pa. The formation of composite films was achieved by mixing the precursor vapors, which were obtained by heating the aluminum and titanium precursors at 403 and 323-353 K, respectively. The films were characterized by XRD, SEM, EPMA and TEM. The crystalline structure and the surface morphology of the nanostructured Al₂O₃-TiO₂ composite films were strongly dependent on the precursor and deposition temperatures.

Idioma original	Inglés
Páginas (desde-hasta)	617-619
Número de páginas	3
Publicación	Journal of Alloys and Compounds
Volumen	495
N.º	2
DOI	https://doi.org/10.1016/j.jallcom.2009.10.200
Estado	Publicada - 16 abr. 2010

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title = "Preparation of nanostructured Al2O3-TiO2 composite films by MOCVD",

abstract = "Nanostructured Al2O3-TiO2 composite films were prepared on glass substrates by metalorganic chemical vapor deposition (MOCVD) using aluminum acetylacetonate and titanium tetraisopropoxide precursors. Oxygen and argon were used as the reactive and carrier gases, respectively. Deposition temperature (Tdep) was varied from 723 to 873 K and total pressure was kept constant at 133-266 Pa. The formation of composite films was achieved by mixing the precursor vapors, which were obtained by heating the aluminum and titanium precursors at 403 and 323-353 K, respectively. The films were characterized by XRD, SEM, EPMA and TEM. The crystalline structure and the surface morphology of the nanostructured Al2O3-TiO2 composite films were strongly dependent on the precursor and deposition temperatures.",

keywords = "Alumina-titania, Composite films, MOCVD, Nanostructures",

author = "P{\'e}rez, {J. A.Galaviz} and Valero, {J. A.Montes de Oca} and Garc{\'i}a, {J. R.Vargas} and Rosales, {H. J.Dorantes}",

note = "Funding Information: Authors wish to thank the financial support through the projects IPN-SIP-2007-0618, IPN-SIP-2008-0801 and IPN-SIP 20080927. Author J. A. Galaviz P{\'e}rez wishes to thank the National Council of Science and Technology (CONACYT) for the financial support for obtaining the master degree.",

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doi = "10.1016/j.jallcom.2009.10.200",

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T1 - Preparation of nanostructured Al2O3-TiO2 composite films by MOCVD

AU - Pérez, J. A.Galaviz

AU - Valero, J. A.Montes de Oca

AU - García, J. R.Vargas

AU - Rosales, H. J.Dorantes

N1 - Funding Information: Authors wish to thank the financial support through the projects IPN-SIP-2007-0618, IPN-SIP-2008-0801 and IPN-SIP 20080927. Author J. A. Galaviz Pérez wishes to thank the National Council of Science and Technology (CONACYT) for the financial support for obtaining the master degree.

PY - 2010/4/16

Y1 - 2010/4/16

N2 - Nanostructured Al2O3-TiO2 composite films were prepared on glass substrates by metalorganic chemical vapor deposition (MOCVD) using aluminum acetylacetonate and titanium tetraisopropoxide precursors. Oxygen and argon were used as the reactive and carrier gases, respectively. Deposition temperature (Tdep) was varied from 723 to 873 K and total pressure was kept constant at 133-266 Pa. The formation of composite films was achieved by mixing the precursor vapors, which were obtained by heating the aluminum and titanium precursors at 403 and 323-353 K, respectively. The films were characterized by XRD, SEM, EPMA and TEM. The crystalline structure and the surface morphology of the nanostructured Al2O3-TiO2 composite films were strongly dependent on the precursor and deposition temperatures.

AB - Nanostructured Al2O3-TiO2 composite films were prepared on glass substrates by metalorganic chemical vapor deposition (MOCVD) using aluminum acetylacetonate and titanium tetraisopropoxide precursors. Oxygen and argon were used as the reactive and carrier gases, respectively. Deposition temperature (Tdep) was varied from 723 to 873 K and total pressure was kept constant at 133-266 Pa. The formation of composite films was achieved by mixing the precursor vapors, which were obtained by heating the aluminum and titanium precursors at 403 and 323-353 K, respectively. The films were characterized by XRD, SEM, EPMA and TEM. The crystalline structure and the surface morphology of the nanostructured Al2O3-TiO2 composite films were strongly dependent on the precursor and deposition temperatures.

KW - Alumina-titania

KW - Composite films

KW - MOCVD

KW - Nanostructures

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DO - 10.1016/j.jallcom.2009.10.200

M3 - Artículo

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VL - 495

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EP - 619

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 2

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