Effect of annealing temperature on the crystalline quality and phase transformation of Chemically Deposited CdSe films

Polycrystalline CdSe thin films were grown on glass substrates by chemical bath deposition at 50°C. The samples were annealed in air atmosphere at different temperatures and characterized by X-ray diffraction and Raman spectroscopy. It was found that the as-grown films have cubic structure. These samples maintain their cubic structure for annealing temperatures between 60°C and 300°C. For annealing temperatures higher than 300°C we obtain a mixture of cubic and hexagonal phases. The analysis made by X-ray diffraction and Raman dispersion show that the samples annealed at temperatures under the phase-transition temperature increase their crystalline quality. In order to determinate the temperature for the complete transition of the cubic phase, we used the precipitated material obtained during the grown of the CdSe films. This material was annealed on air atmosphere between 300°C and 500°C with 50° intervals. The samples were measured by X-ray diffraction. The samples maintained the cubic structure if the annealing temperature is under 300°C. For temperatures between 300°C and 450°C we found a mixture of cubic and hexagonal phase. For an annealing temperature of 500°C we obtain only the hexagonal phase.