Photothermal characterization of electrochemical etching processed n-type porous silicon

A. Calderón; J. J. Alvarado-Gil; Yu Gurevich; A. Cruz-Orea; I. Delgadillo; H. Vargas; L. C.M. Miranda

doi:10.1103/PhysRevLett.79.5022

Photothermal characterization of electrochemical etching processed n-type porous silicon

A. Calderón, J. J. Alvarado-Gil, Yu Gurevich, A. Cruz-Orea, I. Delgadillo, H. Vargas, L. C.M. Miranda

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Resumen

The room temperature thermal diffusivity evolution of electrochemically formed porous silicon as a function of the etching time is investigated. The measurements were carried out using the open-cell photoacoustic technique. The experimental data were analyzed using a composite two-layer model. The results obtained strongly support the existing studies, indicating the presence of a high percentage of SiO₂ in the composition of porous silicon material.

Idioma original	Inglés
Páginas (desde-hasta)	5022-5025
Número de páginas	4
Publicación	Physical Review Letters
Volumen	79
N.º	25
DOI	https://doi.org/10.1103/PhysRevLett.79.5022
Estado	Publicada - 1 ene. 1997
Publicado de forma externa	Sí

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abstract = "The room temperature thermal diffusivity evolution of electrochemically formed porous silicon as a function of the etching time is investigated. The measurements were carried out using the open-cell photoacoustic technique. The experimental data were analyzed using a composite two-layer model. The results obtained strongly support the existing studies, indicating the presence of a high percentage of SiO2 in the composition of porous silicon material.",

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AU - Cruz-Orea, A.

AU - Delgadillo, I.

AU - Vargas, H.

AU - Miranda, L. C.M.

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N2 - The room temperature thermal diffusivity evolution of electrochemically formed porous silicon as a function of the etching time is investigated. The measurements were carried out using the open-cell photoacoustic technique. The experimental data were analyzed using a composite two-layer model. The results obtained strongly support the existing studies, indicating the presence of a high percentage of SiO2 in the composition of porous silicon material.

AB - The room temperature thermal diffusivity evolution of electrochemically formed porous silicon as a function of the etching time is investigated. The measurements were carried out using the open-cell photoacoustic technique. The experimental data were analyzed using a composite two-layer model. The results obtained strongly support the existing studies, indicating the presence of a high percentage of SiO2 in the composition of porous silicon material.

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Photothermal characterization of electrochemical etching processed n-type porous silicon

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