Optical characterization of InAs δ-layers grown by MBE at different substrate temperatures

J. Hernández-Rosas; J. G. Mendoza-Álvarez; S. Gallardo-Hernández; E. Cruz-Hernández; J. S. Rojas-Ramírez; M. López-López

doi:10.1016/j.mejo.2008.01.062

Optical characterization of InAs δ-layers grown by MBE at different substrate temperatures

J. Hernández-Rosas, J. G. Mendoza-Álvarez, S. Gallardo-Hernández, E. Cruz-Hernández, J. S. Rojas-Ramírez, M. López-López

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

2 Citas (Scopus)

Resumen

InAs layers with thickness of ∼ 1 monolayer (δ-layers) were grown by MBE embedded in GaAs barriers in the direction [1 0 0]. Photoluminescence (PL) spectroscopy was employed to study the electronic transitions in the δ-layers. By secondary-ion mass spectroscopy (SIMS) we checked out the possible In segregation. The samples consist of five InAs δ-layers embedded in between 60 nm-thick GaAs barriers, such that the electron wave functions do not overlap each other, as we verified with a model of a square quantum well (SQW), which help us to calculate also the well width.

Idioma original	Inglés
Páginas (desde-hasta)	1284-1285
Número de páginas	2
Publicación	Microelectronics Journal
Volumen	39
N.º	11
DOI	https://doi.org/10.1016/j.mejo.2008.01.062
Estado	Publicada - nov. 2008
Publicado de forma externa	Sí

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@article{179fd192151b4a3e9ece7550416823a6,

title = "Optical characterization of InAs δ-layers grown by MBE at different substrate temperatures",

abstract = "InAs layers with thickness of ∼ 1 monolayer (δ-layers) were grown by MBE embedded in GaAs barriers in the direction [1 0 0]. Photoluminescence (PL) spectroscopy was employed to study the electronic transitions in the δ-layers. By secondary-ion mass spectroscopy (SIMS) we checked out the possible In segregation. The samples consist of five InAs δ-layers embedded in between 60 nm-thick GaAs barriers, such that the electron wave functions do not overlap each other, as we verified with a model of a square quantum well (SQW), which help us to calculate also the well width.",

keywords = "In segregation, InAs, MBE, Quantum wells",

author = "J. Hern{\'a}ndez-Rosas and Mendoza-{\'A}lvarez, {J. G.} and S. Gallardo-Hern{\'a}ndez and E. Cruz-Hern{\'a}ndez and Rojas-Ram{\'i}rez, {J. S.} and M. L{\'o}pez-L{\'o}pez",

note = "Funding Information: This work was partially supported by CONACYT.",

year = "2008",

month = nov,

doi = "10.1016/j.mejo.2008.01.062",

language = "Ingl{\'e}s",

volume = "39",

pages = "1284--1285",

journal = "Microelectronics Journal",

issn = "0026-2692",

publisher = "Elsevier BV",

number = "11",

}

TY - JOUR

T1 - Optical characterization of InAs δ-layers grown by MBE at different substrate temperatures

AU - Hernández-Rosas, J.

AU - Mendoza-Álvarez, J. G.

AU - Gallardo-Hernández, S.

AU - Cruz-Hernández, E.

AU - Rojas-Ramírez, J. S.

AU - López-López, M.

N1 - Funding Information: This work was partially supported by CONACYT.

PY - 2008/11

Y1 - 2008/11

N2 - InAs layers with thickness of ∼ 1 monolayer (δ-layers) were grown by MBE embedded in GaAs barriers in the direction [1 0 0]. Photoluminescence (PL) spectroscopy was employed to study the electronic transitions in the δ-layers. By secondary-ion mass spectroscopy (SIMS) we checked out the possible In segregation. The samples consist of five InAs δ-layers embedded in between 60 nm-thick GaAs barriers, such that the electron wave functions do not overlap each other, as we verified with a model of a square quantum well (SQW), which help us to calculate also the well width.

AB - InAs layers with thickness of ∼ 1 monolayer (δ-layers) were grown by MBE embedded in GaAs barriers in the direction [1 0 0]. Photoluminescence (PL) spectroscopy was employed to study the electronic transitions in the δ-layers. By secondary-ion mass spectroscopy (SIMS) we checked out the possible In segregation. The samples consist of five InAs δ-layers embedded in between 60 nm-thick GaAs barriers, such that the electron wave functions do not overlap each other, as we verified with a model of a square quantum well (SQW), which help us to calculate also the well width.

KW - In segregation

KW - InAs

KW - MBE

KW - Quantum wells

UR - http://www.scopus.com/inward/record.url?scp=54849404318&partnerID=8YFLogxK

U2 - 10.1016/j.mejo.2008.01.062

DO - 10.1016/j.mejo.2008.01.062

M3 - Artículo

SN - 0026-2692

VL - 39

SP - 1284

EP - 1285

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 11

ER -

Optical characterization of InAs δ-layers grown by MBE at different substrate temperatures

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