TY - JOUR
T1 - Nitrogen effect on spin-coated ZnO-based p–n homojunctions
T2 - structural, optical and electrical characteristics
AU - Sánchez-Alarcón, R. I.
AU - Rodríguez-Canto, P. J.
AU - Abargues-Lopez, R.
AU - Martínez-Pastor, J. P.
AU - Aguilar-Frutis, M.
AU - Alarcón-Flores, G.
AU - Carmona-Téllez, S.
AU - Falcony, C.
N1 - Publisher Copyright:
© 2018, Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2018/8/1
Y1 - 2018/8/1
N2 - In this work, ZnO:Al–N/ZnO:Al and ZnO:Ag–N/ZnO:Al homojunctions were deposited by means of spin coating method using precursors obtained by sol gel chemistry. The optical, structural and electrical properties of spin coated undoped and M-doped ZnO thin films (M = Al, Ag–N and Al–N) using ammonium hydroxide as a nitrogen source are reported. The films showed the wurtzite type structure with a c-axis (002) preferential orientation. The films showed a surface morphology consisting of wrinkles, which were constituted of nanocrystals in the range of ∼ 20 nm. The thin films were highly transparent in the visible region of the electromagnetic spectrum. The optical band gap of the films was close to 3.30 eV. Hall Effect measurements indicated that undoped and Al doped ZnO thin films showed an n-type conductivity, whereas ZnO:Al–N and ZnO:Ag–N thin films exhibited p-type conductivity, probably related to the formation of dual acceptor complexes related to nitrogen. Two types of p–n homojunctions (ZnO:Al–N/ZnO:Al and ZnO:Ag–N/ZnO:Al) were fabricated by means of sol–gel spin-coating method. In both cases, a rectifying behavior was observed, as revealed by current–voltage measurements.
AB - In this work, ZnO:Al–N/ZnO:Al and ZnO:Ag–N/ZnO:Al homojunctions were deposited by means of spin coating method using precursors obtained by sol gel chemistry. The optical, structural and electrical properties of spin coated undoped and M-doped ZnO thin films (M = Al, Ag–N and Al–N) using ammonium hydroxide as a nitrogen source are reported. The films showed the wurtzite type structure with a c-axis (002) preferential orientation. The films showed a surface morphology consisting of wrinkles, which were constituted of nanocrystals in the range of ∼ 20 nm. The thin films were highly transparent in the visible region of the electromagnetic spectrum. The optical band gap of the films was close to 3.30 eV. Hall Effect measurements indicated that undoped and Al doped ZnO thin films showed an n-type conductivity, whereas ZnO:Al–N and ZnO:Ag–N thin films exhibited p-type conductivity, probably related to the formation of dual acceptor complexes related to nitrogen. Two types of p–n homojunctions (ZnO:Al–N/ZnO:Al and ZnO:Ag–N/ZnO:Al) were fabricated by means of sol–gel spin-coating method. In both cases, a rectifying behavior was observed, as revealed by current–voltage measurements.
UR - http://www.scopus.com/inward/record.url?scp=85047904332&partnerID=8YFLogxK
U2 - 10.1007/s10854-018-9386-4
DO - 10.1007/s10854-018-9386-4
M3 - Artículo
SN - 0957-4522
VL - 29
SP - 12690
EP - 12699
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 15
ER -