The photoluminescence (PL) spectra, their power and temperature dependences have been investigated for ground and excited states in InAs quantum dots (QDs) embedded in symmetric In0.15Ga0.85As/GaAs quantum well (QW) (dot-in-a-well, DWELL) structures. QD density was 1.3 × 1010 cm-2. The temperature and power dependences of QD PL spectra as well as two stages of PL thermal quenching in the temperature range of 80-300 K and the reason for the variety of activation energies are discussed. © 2009 Elsevier B.V. All rights reserved.
|Idioma original||Inglés estadounidense|
|Número de páginas||103|
|Publicación||Materials Science and Engineering B: Solid-State Materials for Advanced Technology|
|Estado||Publicada - 25 nov 2009|