TY - JOUR
T1 - Multiexcited state study in InAs DWELL structures
AU - Casas-Espinola, J. L.
AU - Torchynska, T. V.
AU - Polupan, G. P.
AU - Velazquez-Lozada, E.
PY - 2009/11/25
Y1 - 2009/11/25
N2 - The photoluminescence (PL) spectra, their power and temperature dependences have been investigated for ground and excited states in InAs quantum dots (QDs) embedded in symmetric In0.15Ga0.85As/GaAs quantum well (QW) (dot-in-a-well, DWELL) structures. QD density was 1.3 × 1010 cm-2. The temperature and power dependences of QD PL spectra as well as two stages of PL thermal quenching in the temperature range of 80-300 K and the reason for the variety of activation energies are discussed. © 2009 Elsevier B.V. All rights reserved.
AB - The photoluminescence (PL) spectra, their power and temperature dependences have been investigated for ground and excited states in InAs quantum dots (QDs) embedded in symmetric In0.15Ga0.85As/GaAs quantum well (QW) (dot-in-a-well, DWELL) structures. QD density was 1.3 × 1010 cm-2. The temperature and power dependences of QD PL spectra as well as two stages of PL thermal quenching in the temperature range of 80-300 K and the reason for the variety of activation energies are discussed. © 2009 Elsevier B.V. All rights reserved.
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U2 - 10.1016/j.mseb.2009.01.006
DO - 10.1016/j.mseb.2009.01.006
M3 - Scientific review
SP - 115
EP - 117
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
ER -