Intrinsic transit times and noise transport time study of Si/SiGe:C Heterejunction bipolar transistors

Eloy Ramirez-Garcia, Frederic Aniel, Mauro A. Enciso-Aguilar, Nicolas Zerounian

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

2 Citas (Scopus)

Resumen

We present the results of intrinsic transit time separation of SiGe:C heterojunction bipolar transistors (HBT). This is performed using a reliable technique based on hydrodynamic modeling. These results are compared to the extraction of the noise transport time. This last parameter is found to be equal to the sum of the base transit time (τB) and of the collector transit time (τC), this result agrees with the findings reported in the literature. This strategy of transit time extraction may help to quantify the influence of base doping, Ge content and temperature on HBT performances.

Idioma originalInglés
Título de la publicación alojadaEuropean Microwave Week 2012
Subtítulo de la publicación alojada"Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012
Páginas175-178
Número de páginas4
EstadoPublicada - 2012
Evento7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012 - Amsterdam, Países Bajos
Duración: 29 oct. 201230 oct. 2012

Serie de la publicación

NombreEuropean Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012

Conferencia

Conferencia7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012
País/TerritorioPaíses Bajos
CiudadAmsterdam
Período29/10/1230/10/12

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