TY - GEN
T1 - Intrinsic transit times and noise transport time study of Si/SiGe:C Heterejunction bipolar transistors
AU - Ramirez-Garcia, Eloy
AU - Aniel, Frederic
AU - Enciso-Aguilar, Mauro A.
AU - Zerounian, Nicolas
PY - 2012
Y1 - 2012
N2 - We present the results of intrinsic transit time separation of SiGe:C heterojunction bipolar transistors (HBT). This is performed using a reliable technique based on hydrodynamic modeling. These results are compared to the extraction of the noise transport time. This last parameter is found to be equal to the sum of the base transit time (τB) and of the collector transit time (τC), this result agrees with the findings reported in the literature. This strategy of transit time extraction may help to quantify the influence of base doping, Ge content and temperature on HBT performances.
AB - We present the results of intrinsic transit time separation of SiGe:C heterojunction bipolar transistors (HBT). This is performed using a reliable technique based on hydrodynamic modeling. These results are compared to the extraction of the noise transport time. This last parameter is found to be equal to the sum of the base transit time (τB) and of the collector transit time (τC), this result agrees with the findings reported in the literature. This strategy of transit time extraction may help to quantify the influence of base doping, Ge content and temperature on HBT performances.
UR - http://www.scopus.com/inward/record.url?scp=84875915310&partnerID=8YFLogxK
M3 - Contribución a la conferencia
AN - SCOPUS:84875915310
SN - 9782874870286
T3 - European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012
SP - 175
EP - 178
BT - European Microwave Week 2012
T2 - 7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012
Y2 - 29 October 2012 through 30 October 2012
ER -