Interface phenomena in Mn<inf>x</inf>O<inf>y</inf>/ZnO) thin films for oxide electronics

Karen A. Neri-Espinoza, Roberto Baca-Arroyo, Jose A. Andraca-Adame, Ramon Pena-Sierra

Resultado de la investigación: Contribución a una conferenciaArtículo

Resumen

© 2019 IEEE. Interface phenomena in oxide electronics are of utmost importance due to the interactions that are present between the materials and can offer interesting electrical behavior for adaptive oxide devices. Thin films were synthesized on a Si (100) n-type substrate by Sputtering where the layers of manganese oxide are obtained through thermal oxidation at medium temperatures (T} < 500°C) and later on, a layer of ZnO:Zn is deposited. X-Ray Diffraction (XRD) and Raman spectroscopy are done to investigate the structure of the Mn; the layers of manganese exhibit different phases of oxidation caused by the thermal process. To study the interface phenomena, an electrical characterization (current - voltage curves) is done to understand what happens in the interface of MnxOy/ZnO. In one of the IV curves obtained of a ZnMnSi structure, a similar curve to the characteristic one of a diode is observed, thus, this work intends to demonstrate the use of Mn and Zn as important metals for oxide electronics and the development of electronic adaptive devices.
Idioma originalInglés estadounidense
DOI
EstadoPublicada - 1 sep 2019
Evento2019 16th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2019 -
Duración: 1 sep 2019 → …

Conferencia

Conferencia2019 16th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2019
Período1/09/19 → …

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