TY - JOUR
T1 - Flexible PEDOT:PSS/ZnO Schottky diodes on polyimide substrates
AU - Hernandez-Como, N.
AU - Lopez-Castillo, M.
AU - Hernandez-Cuevas, F. J.
AU - Baez-Medina, H.
AU - Baca-Arroyo, R.
AU - Aleman, M.
N1 - Publisher Copyright:
© 2019 Elsevier B.V.
PY - 2019/8/15
Y1 - 2019/8/15
N2 - In this work, we used a high work function polymer, PEDOT:PSS, as a Schottky contact in combination with ZnO as the n-type semiconductor. These lead to the formation of a Schottky diode in a flexible polyimide substrate. The flexible device was fabricated using four photolithography steps for further application in circuits with a maximum processing temperature of 300 °C. The electrical characteristics, J-V and C[sbnd]V, were evaluated while performing several bending conditions. The bending radius used in this work were 4, 2 and 1 mm. The variation of the extracted electrical parameters (n, J0, Von, φB, Rs, Ion/Ioff ratio, ND, and Vbi) as a function of the bending radius is discussed.
AB - In this work, we used a high work function polymer, PEDOT:PSS, as a Schottky contact in combination with ZnO as the n-type semiconductor. These lead to the formation of a Schottky diode in a flexible polyimide substrate. The flexible device was fabricated using four photolithography steps for further application in circuits with a maximum processing temperature of 300 °C. The electrical characteristics, J-V and C[sbnd]V, were evaluated while performing several bending conditions. The bending radius used in this work were 4, 2 and 1 mm. The variation of the extracted electrical parameters (n, J0, Von, φB, Rs, Ion/Ioff ratio, ND, and Vbi) as a function of the bending radius is discussed.
KW - Flexible electronics
KW - Photolithography
KW - Schottky diode
UR - http://www.scopus.com/inward/record.url?scp=85069553694&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2019.111060
DO - 10.1016/j.mee.2019.111060
M3 - Artículo
AN - SCOPUS:85069553694
SN - 0167-9317
VL - 216
JO - Microelectronic Engineering
JF - Microelectronic Engineering
M1 - 111060
ER -