In this work, we used a high work function polymer, PEDOT:PSS, as a Schottky contact in combination with ZnO as the n-type semiconductor. These lead to the formation of a Schottky diode in a flexible polyimide substrate. The flexible device was fabricated using four photolithography steps for further application in circuits with a maximum processing temperature of 300 °C. The electrical characteristics, J-V and C[sbnd]V, were evaluated while performing several bending conditions. The bending radius used in this work were 4, 2 and 1 mm. The variation of the extracted electrical parameters (n, J0, Von, φB, Rs, Ion/Ioff ratio, ND, and Vbi) as a function of the bending radius is discussed.