Emitting modification in Si-rich-SiNx films versus silicon nitride compositions

T. Torchynska; G. Polupan; L. Khomenkova; A. Slaoui

doi:10.1557/mrc.2017.39

Emitting modification in Si-rich-SiN_x films versus silicon nitride compositions

T. Torchynska, G. Polupan, L. Khomenkova, A. Slaoui

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

5 Citas (Scopus)

Resumen

SiN_x films were grown by plasma-enhanced chemical vapor deposition on Si substrates with the composition controlled by the flow ratio R: ammonia to silane in the range R = 0.45-1.0. Then SiN_x films were annealed at 1100 °C for 30 min to form Si-quantum dots (QDs). Fourier transform infrared spectroscopy study permits estimating SiN_x compositions. Photoluminescence (PL) spectra of SiN_x films included bands peaked at: 2.87-2.99, 2.42-2.54, 2.10-2.25, and 1.47-1.90 eV. Former three PL bands are attributed to emission via defects in SiN_x films. Fourth PL band is assigned to exciton emission in Si QDs, detected by transmission electron microscopy study in films grown at R ≤ 0.67. The nature of non-radiative defects in SiN_x films is discussed as well.

Idioma original	Inglés
Páginas (desde-hasta)	280-285
Número de páginas	6
Publicación	MRS Communications
Volumen	7
N.º	2
DOI	https://doi.org/10.1557/mrc.2017.39
Estado	Publicada - 1 jun. 2017

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