TY - JOUR
T1 - Emission modification in ZnO nanosheets at thermal annealing
AU - Diaz Cano, Aaron I.
AU - Filali, Brahim El
AU - Torchynska, Tetyana V.
AU - Casas Espinola, Jose L.
PY - 2013
Y1 - 2013
N2 - Photoluminescence (PL) and its temperature dependences, as well as the X ray diffraction (XRD), have been studied in the freshly prepared amorphous phase ZnO nanosheets, obtained by the electrochemical (anodization) method, and in the crystalline annealed ZnO nanosheets. The freshly prepared samples have been divided in two groups. One of these groups has been annealed at 400 °C for 2 hours in ambient air. Defect related PL bands with the peaks at 2.10-2.13, 2.42-2.46 and 2.65-2.69 eV are detected in amorphous state. Appreciable changes in the size of nanosheets as a function of thermal treatments have been revealed. XRD study has shown that annealing stimulates the Zn oxidation and the creation of ZnO with a wurtzite crystal lattice. In crystalline ZnO seven PL bands appeared with the PL peaks 1.46, 1.58, 2.02, 2.43, 2.70, 2.93 and 3.16 eV at 10K. The reasons of emission transformation and the nature of optical transitions related to the studied PL bands have been discussed. It is shown that the anodization method permits by a controllable way to obtain the wide range ZnO emission that is interesting for the future applications in room temperature white light-emitting diodes.
AB - Photoluminescence (PL) and its temperature dependences, as well as the X ray diffraction (XRD), have been studied in the freshly prepared amorphous phase ZnO nanosheets, obtained by the electrochemical (anodization) method, and in the crystalline annealed ZnO nanosheets. The freshly prepared samples have been divided in two groups. One of these groups has been annealed at 400 °C for 2 hours in ambient air. Defect related PL bands with the peaks at 2.10-2.13, 2.42-2.46 and 2.65-2.69 eV are detected in amorphous state. Appreciable changes in the size of nanosheets as a function of thermal treatments have been revealed. XRD study has shown that annealing stimulates the Zn oxidation and the creation of ZnO with a wurtzite crystal lattice. In crystalline ZnO seven PL bands appeared with the PL peaks 1.46, 1.58, 2.02, 2.43, 2.70, 2.93 and 3.16 eV at 10K. The reasons of emission transformation and the nature of optical transitions related to the studied PL bands have been discussed. It is shown that the anodization method permits by a controllable way to obtain the wide range ZnO emission that is interesting for the future applications in room temperature white light-emitting diodes.
KW - annealing
KW - luminescence
KW - porosity
UR - http://www.scopus.com/inward/record.url?scp=84899494885&partnerID=8YFLogxK
U2 - 10.1557/opl.2013.313
DO - 10.1557/opl.2013.313
M3 - Artículo de la conferencia
AN - SCOPUS:84899494885
SN - 0272-9172
VL - 1534
SP - A151-A157
JO - Materials Research Society Symposium Proceedings
JF - Materials Research Society Symposium Proceedings
T2 - 21st International Materials Research Congress, IMRC 2012
Y2 - 12 August 2012 through 17 August 2012
ER -