TY - JOUR
T1 - Emission Dependent on composition of Si-rich-SiNX Films obtained by PECVD
AU - Jaramillo Gomez, J. A.
AU - Torchynska, T. V.
AU - Casas Espinola, J. L.
AU - Bentosa Gutiérrez, J. A.
AU - Khomenkova, L.
AU - Slaoui, A.
N1 - Publisher Copyright:
© Published under licence by IOP Publishing Ltd.
PY - 2017/2/16
Y1 - 2017/2/16
N2 - Silicon-rich silicon nitride films with different stoichiometry were grown on silicon substrate using the plasma-enhanced chemical vapor deposition. The excess silicon content in the films was monitored via a variation of the NH3/SiH4 gas flow ratio from 0.45 up to 1.0. Morphology and luminescence properties of the films were studied by means of atomic force microscopy (AFM) and photoluminescence (PL) methods. High-temperature annealing was employed to produce the silicon nanocrystals in the films and to enhance the photoluminescence in the range of 1.6-3.0 eV. The PL spectrum was found to be complex due to the contribution of several radiative channels in emission process. It was determined that their competition leads to the non-monotonous variation of total PL peak position with the increase of the Si excess content. It was observed that the shape of PL spectra depends on an excitation wavelength. The ways to control the PL emission is proposed based on the discussion of the PL mechanism.
AB - Silicon-rich silicon nitride films with different stoichiometry were grown on silicon substrate using the plasma-enhanced chemical vapor deposition. The excess silicon content in the films was monitored via a variation of the NH3/SiH4 gas flow ratio from 0.45 up to 1.0. Morphology and luminescence properties of the films were studied by means of atomic force microscopy (AFM) and photoluminescence (PL) methods. High-temperature annealing was employed to produce the silicon nanocrystals in the films and to enhance the photoluminescence in the range of 1.6-3.0 eV. The PL spectrum was found to be complex due to the contribution of several radiative channels in emission process. It was determined that their competition leads to the non-monotonous variation of total PL peak position with the increase of the Si excess content. It was observed that the shape of PL spectra depends on an excitation wavelength. The ways to control the PL emission is proposed based on the discussion of the PL mechanism.
KW - Silicon nanocrystals
KW - photoluminescence
KW - plasma-enhanced chemical vapour deposition
KW - silicon nitride
UR - http://www.scopus.com/inward/record.url?scp=85016495918&partnerID=8YFLogxK
U2 - 10.1088/1757-899X/169/1/012021
DO - 10.1088/1757-899X/169/1/012021
M3 - Artículo de la conferencia
AN - SCOPUS:85016495918
SN - 1757-8981
VL - 169
JO - IOP Conference Series: Materials Science and Engineering
JF - IOP Conference Series: Materials Science and Engineering
IS - 1
M1 - 012021
T2 - 2016 International Conference on Defects in Insulating Materials, ICDIM 2016
Y2 - 10 July 2016 through 15 July 2016
ER -