Emission and HR-XRD varying in GaAs/AlGaInAs heterostructures with InAs quantum dots at annealing

Ingeniería y ciencia de los materiales

• Photoluminescence 100%
• Heterojunctions 80%
• Annealing 61%
• X ray diffraction 30%
• Blue shift 29%
• Binding energy 24%
• Semiconductor quantum wells 24%
• Molecular beam epitaxy 23%
• Ground state 23%
• Epitaxial growth 21%
• Chemical analysis 20%
• Computer simulation 8%
• Hot Temperature 7%

Física y astronomía

• quantum dots 47%
• photoluminescence 43%
• high resolution 37%
• annealing 37%
• diffraction 16%
• blue shift 16%
• epitaxy 15%
• x rays 13%
• binding energy 13%
• molecular beam epitaxy 13%
• quantum wells 11%
• computer programs 11%
• ground state 10%
• shift 9%
• simulation 5%
• energy 4%

Química

• Quantum Dot 54%
• Annealing 48%
• Photoluminescence 35%
• Interdiffusion 24%
• Molecular Beam Epitaxy 22%
• Epitaxial Growth 18%
• Photoluminescence Spectrum 15%
• Binding Energy 13%
• Ground State 12%
• Blue 11%
• Alloy 10%
• Simulation 9%
• X-Ray Diffraction 7%
• Energy 7%