Emission and elastic strain study in GaAs/In0.15Ga0.85As/InxGa1−xAs/GaAs quantum wells with embedded InAs quantum dots

L. G. Vega-Macotela; T. V. Torchynska; G. Polupan

doi:10.1007/s10854-017-6536-z

Emission and elastic strain study in GaAs/In_0.15Ga_0.85As/In_xGa_1−xAs/GaAs quantum wells with embedded InAs quantum dots

L. G. Vega-Macotela, T. V. Torchynska, G. Polupan

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

8 Citas (Scopus)

Resumen

GaAs/In_0.15Ga_0.85As/In_xGa_1−xAs/GaAs quantum wells (QWs) with embedded InAs quantum dots (QDs) and with variable In compositions in capping In_xGa_1−xAs layers (0.10 ≤ x ≤ 0.25) have been studied by means of photoluminescence, X ray diffraction (XRD) and high resolution XRD (HR-XRD) methods. In_xGa_1−xAs composition varying is accompanied by changing no monotonically the PL spectrum parameters of InAs QDs and by decreasing the InAs QD sizes. XRD and HR-XRD studies permit to control the InGaAs layer compositions and elastic strains in QWs. The analysis of HR-XRD results has shown that the level of elastic strain varies no monotonically in studied QD structures as well. The physical reasons of mentioned optical and structural effects and their dependences on capping layer compositions have been discussed.

Idioma original	Inglés
Páginas (desde-hasta)	7126-7131
Número de páginas	6
Publicación	Journal of Materials Science: Materials in Electronics
Volumen	28
N.º	10
DOI	https://doi.org/10.1007/s10854-017-6536-z
Estado	Publicada - 1 may. 2017

Acceder al documento

10.1007/s10854-017-6536-z

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

@article{f80b321e419841289d3c03b1d0e69597,

title = "Emission and elastic strain study in GaAs/In0.15Ga0.85As/InxGa1−xAs/GaAs quantum wells with embedded InAs quantum dots",

abstract = "GaAs/In0.15Ga0.85As/InxGa1−xAs/GaAs quantum wells (QWs) with embedded InAs quantum dots (QDs) and with variable In compositions in capping InxGa1−xAs layers (0.10 ≤ x ≤ 0.25) have been studied by means of photoluminescence, X ray diffraction (XRD) and high resolution XRD (HR-XRD) methods. InxGa1−xAs composition varying is accompanied by changing no monotonically the PL spectrum parameters of InAs QDs and by decreasing the InAs QD sizes. XRD and HR-XRD studies permit to control the InGaAs layer compositions and elastic strains in QWs. The analysis of HR-XRD results has shown that the level of elastic strain varies no monotonically in studied QD structures as well. The physical reasons of mentioned optical and structural effects and their dependences on capping layer compositions have been discussed.",

author = "Vega-Macotela, {L. G.} and Torchynska, {T. V.} and G. Polupan",

note = "Publisher Copyright: {\textcopyright} 2017, Springer Science+Business Media New York.",

year = "2017",

month = may,

day = "1",

doi = "10.1007/s10854-017-6536-z",

language = "Ingl{\'e}s",

volume = "28",

pages = "7126--7131",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

number = "10",

}

Emission and elastic strain study in GaAs/In_0.15Ga_0.85As/In_xGa_1−xAs/GaAs quantum wells with embedded InAs quantum dots. / Vega-Macotela, L. G.; Torchynska, T. V.; Polupan, G.
En: Journal of Materials Science: Materials in Electronics, Vol. 28, N.º 10, 01.05.2017, p. 7126-7131.

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

TY - JOUR

T1 - Emission and elastic strain study in GaAs/In0.15Ga0.85As/InxGa1−xAs/GaAs quantum wells with embedded InAs quantum dots

AU - Vega-Macotela, L. G.

AU - Torchynska, T. V.

AU - Polupan, G.

PY - 2017/5/1

Y1 - 2017/5/1

N2 - GaAs/In0.15Ga0.85As/InxGa1−xAs/GaAs quantum wells (QWs) with embedded InAs quantum dots (QDs) and with variable In compositions in capping InxGa1−xAs layers (0.10 ≤ x ≤ 0.25) have been studied by means of photoluminescence, X ray diffraction (XRD) and high resolution XRD (HR-XRD) methods. InxGa1−xAs composition varying is accompanied by changing no monotonically the PL spectrum parameters of InAs QDs and by decreasing the InAs QD sizes. XRD and HR-XRD studies permit to control the InGaAs layer compositions and elastic strains in QWs. The analysis of HR-XRD results has shown that the level of elastic strain varies no monotonically in studied QD structures as well. The physical reasons of mentioned optical and structural effects and their dependences on capping layer compositions have been discussed.

AB - GaAs/In0.15Ga0.85As/InxGa1−xAs/GaAs quantum wells (QWs) with embedded InAs quantum dots (QDs) and with variable In compositions in capping InxGa1−xAs layers (0.10 ≤ x ≤ 0.25) have been studied by means of photoluminescence, X ray diffraction (XRD) and high resolution XRD (HR-XRD) methods. InxGa1−xAs composition varying is accompanied by changing no monotonically the PL spectrum parameters of InAs QDs and by decreasing the InAs QD sizes. XRD and HR-XRD studies permit to control the InGaAs layer compositions and elastic strains in QWs. The analysis of HR-XRD results has shown that the level of elastic strain varies no monotonically in studied QD structures as well. The physical reasons of mentioned optical and structural effects and their dependences on capping layer compositions have been discussed.

UR - http://www.scopus.com/inward/record.url?scp=85014903962&partnerID=8YFLogxK

U2 - 10.1007/s10854-017-6536-z

DO - 10.1007/s10854-017-6536-z

M3 - Artículo

SN - 0957-4522

VL - 28

SP - 7126

EP - 7131

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 10

ER -