Electro-thermal considerations dedicated to 3D integration; noise coupling

Yue Ma, Olivier Valorge, J. R. Cárdenas-Valdez, J. C. Núñez-Perez, J. Verdier, Francis Calmon, Christian Gontrand

Producción científica: Capítulo del libro/informe/acta de congresoCapítulorevisión exhaustiva

Resumen

3D integration is considered the most promising solution to overcome current challenges in planar technologies. As an emerging technology, electrical compact models are notably required for 3D interconnects, including Through-Silicon Via (TSV), to accurate 3D-system performances. More generally, analytical substrate extraction methods, relying on the Transmission Line Matrix (TLM) method, or the use of Green kernels, are proposed to model multilayers substrates on an electrical, but also thermal, points of view. An important problem for designers of complex heterogeneous circuits, combining digital and analog parts, is also to predict the perturbations coming from commutating logical gates, flowing through the substrate to reach some sensitive analog blocks. We then present, in this paper, an application of a stochastic model based on Markovian processes; the digital switching activity is modeled as functions defined as Markov Chains. The final goal is to grasp the noise power density of such perturbations. As an example, we extract an actual interference signal resulting from the modulation of parasitic injected waveforms for instance into some circuit supply driven by the discrete stochastic process.

Idioma originalInglés
Título de la publicación alojadaNoise Coupling in System-on-Chip
EditorialCRC Press
Páginas445-484
Número de páginas40
ISBN (versión digital)9781138031616
ISBN (versión impresa)9781498796774
DOI
EstadoPublicada - 1 ene. 2018

Huella

Profundice en los temas de investigación de 'Electro-thermal considerations dedicated to 3D integration; noise coupling'. En conjunto forman una huella única.

Citar esto