Electro- and photoluminescence spectra transformation in GaP LEDs at the creation of dislocations

Tatyana V. Torchynska; Alia Kabatskaia; Nadezda Korsunskaya; Vladimir Kooshnirenko; Moissei Sheinkman; Georgiy Polupan

Electro- and photoluminescence spectra transformation in GaP LEDs at the creation of dislocations

Título traducido de la contribución: Transformación de espectros de electro y fotoluminiscencia en LED GaP en la creación de dislocaciones

Tatyana V. Torchynska, Alia Kabatskaia, Nadezda Korsunskaya, Vladimir Kooshnirenko, Moissei Sheinkman, Georgiy Polupan

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

Resumen

The transformation of the excitonic and donor-acceptor (DA) luminescence spectra of GaP:N p⁺-n-n⁺ light emitting diodes (LED) at the introduction of dislocations was investigated. The effect of a dislocation network was analyzed. Results showed that the presence of dislocations bring about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their photonic replicas, and also the appearance of a new luminescence band.

Título traducido de la contribución	Transformación de espectros de electro y fotoluminiscencia en LED GaP en la creación de dislocaciones
Idioma original	Inglés
Páginas (desde-hasta)	I/-
Publicación	Proceedings of SPIE - The International Society for Optical Engineering
Volumen	3975
Estado	Publicada - 2000
Evento	IWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices - New Delhi, India Duración: 14 dic. 1999 → 18 dic. 1999

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title = "Electro- and photoluminescence spectra transformation in GaP LEDs at the creation of dislocations",

abstract = "The transformation of the excitonic and donor-acceptor (DA) luminescence spectra of GaP:N p+-n-n+ light emitting diodes (LED) at the introduction of dislocations was investigated. The effect of a dislocation network was analyzed. Results showed that the presence of dislocations bring about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their photonic replicas, and also the appearance of a new luminescence band.",

author = "Torchynska, {Tatyana V.} and Alia Kabatskaia and Nadezda Korsunskaya and Vladimir Kooshnirenko and Moissei Sheinkman and Georgiy Polupan",

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journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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Electro- and photoluminescence spectra transformation in GaP LEDs at the creation of dislocations. / Torchynska, Tatyana V.; Kabatskaia, Alia; Korsunskaya, Nadezda et al.
En: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3975, 2000, p. I/-.

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

TY - JOUR

T1 - Electro- and photoluminescence spectra transformation in GaP LEDs at the creation of dislocations

AU - Torchynska, Tatyana V.

AU - Kabatskaia, Alia

AU - Korsunskaya, Nadezda

AU - Kooshnirenko, Vladimir

AU - Sheinkman, Moissei

AU - Polupan, Georgiy

PY - 2000

Y1 - 2000

N2 - The transformation of the excitonic and donor-acceptor (DA) luminescence spectra of GaP:N p+-n-n+ light emitting diodes (LED) at the introduction of dislocations was investigated. The effect of a dislocation network was analyzed. Results showed that the presence of dislocations bring about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their photonic replicas, and also the appearance of a new luminescence band.

AB - The transformation of the excitonic and donor-acceptor (DA) luminescence spectra of GaP:N p+-n-n+ light emitting diodes (LED) at the introduction of dislocations was investigated. The effect of a dislocation network was analyzed. Results showed that the presence of dislocations bring about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their photonic replicas, and also the appearance of a new luminescence band.

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M3 - Artículo de la conferencia

AN - SCOPUS:0033704618

SN - 0277-786X

VL - 3975

SP - I/-

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - IWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices

Y2 - 14 December 1999 through 18 December 1999

ER -

Electro- and photoluminescence spectra transformation in GaP LEDs at the creation of dislocations

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