TY - JOUR
T1 - Electrical, optical, and structural characteristics of Al2O 3 thin films prepared by pulsed ultrasonic sprayed pyrolysis
AU - Carmona-Tellez, S.
AU - Guzman-Mendoza, J.
AU - Aguilar-Frutis, M.
AU - Alarcon-Flores, G.
AU - Garcia-Hipolito, M.
AU - Canseco, M. A.
AU - Falcony, C.
N1 - Funding Information:
The authors appreciate the technical assistance of J. Garcia-Coronel, R. Fragoso, M. Guerrero, and A. Soto of the Physics Department of CINVESTAV-IPN. The authors are also grateful for the financial support from CONACyT-Mexico, as well as to SIP-IPN and COFAA-IPN (Grant Nos. 20060899 and 20071246).
PY - 2008
Y1 - 2008
N2 - The optical, structural, and electrical characteristics of aluminum oxide thin films deposited by pulsed ultrasonic sprayed pyrolysis are reported. The films are deposited on crystalline silicon at temperatures from 400 to 550°C using a chemical solution of aluminum acetylacetonate, as source of aluminum, and N, N -dimethylformamide, as solvent. A H2 O-N H4 OH mist is supplied simultaneously during deposition to improve the films' properties. The results showed that the properties of the as deposited films depended strongly on the number of pulses used and on the substrate temperature. The thickness of the films is under 300 Å and the best films' properties showed an index of refraction close to 1.6 and a root mean square surface roughness of about 7.5 Å in average. Infrared spectroscopy shows that Si O2 is observed at the interface with silicon of the Al2 O3 films and seemed to play, as expected, a dramatic role in the electrical characteristics of the interface. Films with a dielectric constant higher than 8 and an interface trap density at midgap in the 1010 eV-1 cm-2 range are obtained. Films deposited with three pulses and at 550 °C are able to stand an electric field up to 4 MVcm.
AB - The optical, structural, and electrical characteristics of aluminum oxide thin films deposited by pulsed ultrasonic sprayed pyrolysis are reported. The films are deposited on crystalline silicon at temperatures from 400 to 550°C using a chemical solution of aluminum acetylacetonate, as source of aluminum, and N, N -dimethylformamide, as solvent. A H2 O-N H4 OH mist is supplied simultaneously during deposition to improve the films' properties. The results showed that the properties of the as deposited films depended strongly on the number of pulses used and on the substrate temperature. The thickness of the films is under 300 Å and the best films' properties showed an index of refraction close to 1.6 and a root mean square surface roughness of about 7.5 Å in average. Infrared spectroscopy shows that Si O2 is observed at the interface with silicon of the Al2 O3 films and seemed to play, as expected, a dramatic role in the electrical characteristics of the interface. Films with a dielectric constant higher than 8 and an interface trap density at midgap in the 1010 eV-1 cm-2 range are obtained. Films deposited with three pulses and at 550 °C are able to stand an electric field up to 4 MVcm.
UR - http://www.scopus.com/inward/record.url?scp=39349085211&partnerID=8YFLogxK
U2 - 10.1063/1.2838467
DO - 10.1063/1.2838467
M3 - Artículo
SN - 0021-8979
VL - 103
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 3
M1 - 034105
ER -