Electrical characterization of sputtered Ge:Sb:Te films using impedance measurements

E. Morales-Sánchez, E. F. Prokhorov, A. Mendoza-Galván, J. González-Hernández

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

10 Citas (Scopus)

Resumen

The impedance measurements in Ge2Sb2Te5 thin amorphous films, as a function of temperature, have shown that the contacts have a strong influence on the electrical properties of these materials. These measurements also allow to separate the two contributions, contacts and material. It is found that, in all as-prepared films, the activation energy for conductance is 0.347 ± 0.026 eV. The impedance measurements reveal that, when the samples are heated in the temperature range between the glass transition and crystallization temperature, some nuclei appear. X-ray measurements have shown that these nuclei have the Ge1Sb4Te7 stoichiometric composition, which is gradually transformed into the Ge2Sb2Te5 cubic phase with further heating. Using the Maxwell-Wagner model the volume fraction of these nuclei was estimated in films with different thickness.

Idioma originalInglés
Páginas (desde-hasta)361-364
Número de páginas4
PublicaciónVacuum
Volumen69
N.º1-3
DOI
EstadoPublicada - 24 dic. 2002
Publicado de forma externa

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