TY - JOUR
T1 - Effects of low-temperature annealing on electrical properties of Thin-film Transistors based on Zinc Oxide films deposited by ultrasonic spray pyrolysis
T2 - Impact of annealing time
AU - Dominguez, Miguel A.
AU - Flores, Francisco
AU - Martinez, Javier
AU - Orduña-Diaz, Abdu
N1 - Publisher Copyright:
© 2016 Elsevier B.V.
PY - 2016/9/30
Y1 - 2016/9/30
N2 - In this work, the study of annealing effects on electrical properties of Zinc Oxide Thin-film Transistors is presented. The samples were annealed at 180 °C under Nitrogen ambient. The conductivity and contact resistance of ZnO films with Aluminum electrodes are studied by Transmission Line Method. Also, the Zinc Oxide films obtained by ultrasonic spray pyrolysis at 200 °C are studied by X-ray diffraction and Fourier transform infrared spectroscopy. A comparison of the electrical properties as a function of annealing time is presented. The results show an optimal annealing time and after this time, the metal-ZnO interface deteriorates.
AB - In this work, the study of annealing effects on electrical properties of Zinc Oxide Thin-film Transistors is presented. The samples were annealed at 180 °C under Nitrogen ambient. The conductivity and contact resistance of ZnO films with Aluminum electrodes are studied by Transmission Line Method. Also, the Zinc Oxide films obtained by ultrasonic spray pyrolysis at 200 °C are studied by X-ray diffraction and Fourier transform infrared spectroscopy. A comparison of the electrical properties as a function of annealing time is presented. The results show an optimal annealing time and after this time, the metal-ZnO interface deteriorates.
KW - Electrical properties
KW - Thin-film transistors
KW - X-ray diffraction
KW - ZnO
UR - http://www.scopus.com/inward/record.url?scp=84978832043&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2016.07.036
DO - 10.1016/j.tsf.2016.07.036
M3 - Artículo
SN - 0040-6090
VL - 615
SP - 243
EP - 246
JO - Thin Solid Films
JF - Thin Solid Films
ER -