Effects of germane flow rate in electrical properties of a-SiGe:H films for ambipolar thin-film transistors

Miguel Dominguez, Pedro Rosales, Alfonso Torres, Francisco Flores, Joel Molina, Mario Moreno, Jose Luna, Abdu Orduña

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

7 Citas (Scopus)

Resumen

In this work, the study of germane flow rate in electrical properties of a-SiGe:H films is presented. The a-SiGe:H films deposited by low frequency plasma-enhanced chemical vapor deposition at 300 °C were characterized by Fourier transform infrared spectroscopy, measurements of temperature dependence of conductivity and UV-visible spectroscopic ellipsometry. After finding the optimum germane flow rate conditions, a-SiGe:H films were deposited at 200 °C and analyzed. The use of a-SiGe:H films at 200 °C as active layer of low-temperature ambipolar thin-film transistors (TFTs) was demonstrated. The inverted staggered a-SiGe:H TFTs with Spin-On Glass as gate insulator were fabricated. These results suggest that there is an optimal Ge content in the a-SiGe:H films that improves its electrical properties.

Idioma originalInglés
Páginas (desde-hasta)260-263
Número de páginas4
PublicaciónThin Solid Films
Volumen562
DOI
EstadoPublicada - 1 jul. 2014

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