TY - JOUR
T1 - Effect of the sulfur and fluorine concentration on physical properties of CdS films grown by chemical bath deposition
AU - Nieto-Zepeda, K. E.
AU - Guillén-Cervantes, A.
AU - Rodríguez-Rosales, K.
AU - Santos-Cruz, J.
AU - Santos-Cruz, D.
AU - de la, M.
AU - Zelaya-Ángel, O.
AU - Santoyo-Salazar, J.
AU - Hernández-Hernández, L. A.
AU - Contreras-Puente, G.
AU - de Moure-Flores, F.
N1 - Publisher Copyright:
© 2017
PY - 2017
Y1 - 2017
N2 - Undoped and F-doped CdS thin films were grown on glass slides by chemical bath deposition using thiourea, cadmium acetate and ammonium fluoride as sulfur, cadmium, and fluorine sources, respectively. Undoped CdS films were deposited varying the concentration of thiourea. Once the optimal thiourea concentration was determined, based on the crystalline quality of the samples, this concentration was maintained and ammonium fluoride was added at different concentrations in order to explore the effect of the F nominal concentration on properties of CdS films. Undoped and F-doped CdS films were characterized by X-ray diffraction, UV–Vis, room temperature photoluminescence, and four probe resistivity measurements. Results showed highly transparent F-doped CdS films with strong PL and low resistivity were obtained.
AB - Undoped and F-doped CdS thin films were grown on glass slides by chemical bath deposition using thiourea, cadmium acetate and ammonium fluoride as sulfur, cadmium, and fluorine sources, respectively. Undoped CdS films were deposited varying the concentration of thiourea. Once the optimal thiourea concentration was determined, based on the crystalline quality of the samples, this concentration was maintained and ammonium fluoride was added at different concentrations in order to explore the effect of the F nominal concentration on properties of CdS films. Undoped and F-doped CdS films were characterized by X-ray diffraction, UV–Vis, room temperature photoluminescence, and four probe resistivity measurements. Results showed highly transparent F-doped CdS films with strong PL and low resistivity were obtained.
KW - CdS films
KW - Chemical bath deposition
KW - F-doped CdS films
KW - Optical properties
KW - Room temperature photoluminescence
UR - http://www.scopus.com/inward/record.url?scp=85021221921&partnerID=8YFLogxK
U2 - 10.1016/j.rinp.2017.06.008
DO - 10.1016/j.rinp.2017.06.008
M3 - Artículo
SN - 2211-3797
VL - 7
SP - 1971
EP - 1975
JO - Results in Physics
JF - Results in Physics
ER -