TY - JOUR
T1 - Efecto de la temperatura de substrato en las propiedades estructurales, ópticas y ferroeléctricas de películas delgadas de BaTiO3 depositadas por RF sputtering
AU - Márquez-Herrera, A.
AU - Hernández-Rodríguez, E.
AU - Calzadilla-Amaya, O.
AU - Meléndez-Lira, M.
AU - Zapata-Torres, M.
PY - 2012
Y1 - 2012
N2 - Thin Films of Barium Titanate (BaTiO3) were grown on nichrome and quartz substrates, using a BaTiO3 target, by RF-sputtering technique. We varied the substrate temperature in order to study its effect on the structural, optical and ferroelectric properties of the samples. The results of the X-Ray diffraction showed tetragonal structure with increases of the cristallinity as increases the substrate temperature. Furthermore, it observed by ultraviolet-visible (UV-VIS) spectroscopy that the band gap decreased as the substrate temperature increases showing abrupt sharp decrease at 494.8°C. The ferroelectric properties of the films showed a dependence with substrate temperature, the best ferroelectric answer was obtained at 494.8°C.
AB - Thin Films of Barium Titanate (BaTiO3) were grown on nichrome and quartz substrates, using a BaTiO3 target, by RF-sputtering technique. We varied the substrate temperature in order to study its effect on the structural, optical and ferroelectric properties of the samples. The results of the X-Ray diffraction showed tetragonal structure with increases of the cristallinity as increases the substrate temperature. Furthermore, it observed by ultraviolet-visible (UV-VIS) spectroscopy that the band gap decreased as the substrate temperature increases showing abrupt sharp decrease at 494.8°C. The ferroelectric properties of the films showed a dependence with substrate temperature, the best ferroelectric answer was obtained at 494.8°C.
KW - Annealing
KW - Heater system
KW - Thin films
UR - http://www.scopus.com/inward/record.url?scp=84867501841&partnerID=8YFLogxK
M3 - Artículo
SN - 0035-001X
VL - 58
SP - 308
EP - 312
JO - Revista Mexicana de Fisica
JF - Revista Mexicana de Fisica
IS - 4
ER -