Design and fabrication of a bidimentional microbolometer array for Terahertz detection characterized at different temperatures

We present the design, micromachining and characterization of a bidimentional bolometer array for radiation detection in the 0.7-1.5 THz frequency range. The detector is based on a boron doped amorphous silicon film (a-Si-B:H). The film optimized for sensitivity enhancement was obtained using 500 sccm diborane flow with 95 nm thickness. The sensing layer was deposited using plasma enhanced chemical vapor deposition (PECVD) technique at low frequency on a 0.45 μm thick silicon nitride membrane sustained by a micromachined frame in crystalline silicon. The design consists of four 5x5 bolometer arrays made by conventional lithography. The bolometer active area is 660 μm x 420 μm and the detector will operate as a focal plane array. The current-voltage characteristics present an ohmic behaviour; the temperature coefficient of resistance (TCR) was obtained by measuring the bolometer performance from room temperature down to liquid nitrogen temperature. The responsivity was measured under illumination from a black body radiating at 300, 500, 700, 900 and 1100°C, obtaining a value of R =1.17 x 10^-2 A/W with a dark current of 4.43 x 10^-9 A.