Resumen
The growth of tungsten oxide nanowires on silicon substrates without using any catalyst is demonstrated by means of close-spaced vapor transport (CSVT) technique at atmospheric pressure. The source was formerly prepared from a tungsten foil to produce a tungsten oxide film. CSVT array is completed with silicon substrates located at a distance of ∼350 μm over the tungsten oxide source at moderate temperatures (∼750°C). Two distinct kinds of nanostructures were produced; a uniform distribution of free standing tungsten oxide wires of several micrometers in length with diameters less than 150 nm; and wires assembled to form nanowire bundle. The X-ray diffraction characterizations show that the phases of WO 2.7 and WO 2.9 are present.
Idioma original | Inglés |
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Páginas (desde-hasta) | 31-37 |
Número de páginas | 7 |
Publicación | Journal of Nano Research |
Volumen | 9 |
DOI | |
Estado | Publicada - 15 feb. 2010 |
Publicado de forma externa | Sí |