Resumen
We present the results imaginary part of the dielectric function of porous silicon, which were obtained with the tight-binding 128-atom supercell model for different porosities. The supercells have been chosen to allow the interconnection of the Si skeleton. We have analyzed also the effects of pore morphology. We have found that, at a fixed porosity, the developing of the surface, resulting in the increase of saturating hydrogen atoms, leads to a noticeable blueshift of the absorption edge.
Idioma original | Inglés |
---|---|
Páginas (desde-hasta) | 231-236 |
Número de páginas | 6 |
Publicación | Materials Research Society Symposium - Proceedings |
Volumen | 579 |
Estado | Publicada - 2000 |
Publicado de forma externa | Sí |
Evento | Optical Properties of Materials - Boston, MA, Estados Unidos Duración: 30 nov. 1999 → 2 dic. 1999 |