Computation of the porous silicon dielectric function in the supercell model and comparison with experiment

J. Tagüeña-Martínez, Y. G. Rubo, M. Beltrán, C. Wang, M. Cruz

Producción científica: Contribución a una revistaArtículo de la conferenciarevisión exhaustiva

Resumen

We present the results imaginary part of the dielectric function of porous silicon, which were obtained with the tight-binding 128-atom supercell model for different porosities. The supercells have been chosen to allow the interconnection of the Si skeleton. We have analyzed also the effects of pore morphology. We have found that, at a fixed porosity, the developing of the surface, resulting in the increase of saturating hydrogen atoms, leads to a noticeable blueshift of the absorption edge.

Idioma originalInglés
Páginas (desde-hasta)231-236
Número de páginas6
PublicaciónMaterials Research Society Symposium - Proceedings
Volumen579
EstadoPublicada - 2000
Publicado de forma externa
EventoOptical Properties of Materials - Boston, MA, Estados Unidos
Duración: 30 nov. 19992 dic. 1999

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