Resumen
The photoluminescence (PL) and its temperature dependences have been studied in MBE grown InAs quantum dots (QDs) embedded in Al0.3Ga0.7As/In0.15Ga0. 85As/AlxGa1-xInyAs quantum wells (QWs) in dependence on the composition of capping layers. Two types of capping layers (Al0.3Ga0.7As and Al0.40Ga0.45In0.15As) were investigated. Temperature dependences of PL peak positions in QDs have been analyzed in the range of 10-300K and compared with the temperature shrinkage of the band gap in the bulk InAs crystal. This permits to investigate the efficiency of the Ga(Al)/In inter diffusion processes between QDs and capping layers in dependence on the capping layer compositions. The band gap fitting parameters obtained for InAs QDs have been compared with known ones for the bulk InAs crystal. It is shown that the efficiency of the Ga(Al)/In inter diffusion is high in the QD structures with Al0.3Ga0.7As capping layer. Finally the reasons of higher thermal stability of the structure with Al0.40 Ga0.45 In 0.15 As capping layer have been analyzed and discussed.
| Título traducido de la contribución | Estudio comparativo de la variación de la fotoluminiscencia en puntos cuánticos de InAs incrustados en pozos cuánticos de InAlGaAs |
|---|---|
| Idioma original | Inglés |
| Páginas (desde-hasta) | A51-A56 |
| Publicación | Materials Research Society Symposium Proceedings |
| Volumen | 1534 |
| DOI | |
| Estado | Publicada - 2013 |
| Evento | 21st International Materials Research Congress, IMRC 2012 - Cancun, México Duración: 12 ago. 2012 → 17 ago. 2012 |