CMOS prototype image sensor with edge enhancement to compensate for blurring

Jair Garcia-Lamont, Miguel A. Aleman-Arce, Luis A. Villa-Vargas

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

Resumen

In this article, the design and realisation of an analogue complementary metal oxide semiconductor (CMOS) prototype image sensor with edge enhancement to compensate for blurring is presented. The chip is designed with voltage and current modes, and the main parts are one 16 × 16 pixel array, one pair of absolute value circuits and three trans-impedance amplifiers. The technology process is TSMC 0.35 μm. The edge processing is performed in parallel on pixel level. The performance of the sensor comprises a processing time of 450ns; an optical dynamic range of 53dB; a power consumption, at 30 frames/s, of 1.5mW; and a peak signal-to-noise ratio of 44dB.

Idioma originalInglés
Páginas (desde-hasta)503-518
Número de páginas16
PublicaciónInternational Journal of Electronics
Volumen99
N.º4
DOI
EstadoPublicada - 1 abr. 2012

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