Bi doped CdTe: Increasing potentialities of CdTe based solar cells

C. M. Ruiz, O. Vigil, E. Saucedo, G. Contreras-Puente, V. Bermúdez

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

10 Citas (Scopus)

Resumen

CdTe films were deposited by closed space sublimation from different CdTe:Bi targets (from non-doped up to 0.16at.%) previously sintered by the Bridgman method. X-ray diffraction measurements demonstrate that CdTe films are formed and Bi is incorporated. Electrical and optical characterizations show that thin films reproduce the bulk material behaviour with a decrease in resistivity and an increase in photoconductivity. Also a limit is found in the increase of photoconductivity properties versus Bi concentration.

Idioma originalInglés
Número de artículo011
Páginas (desde-hasta)7163-7169
Número de páginas7
PublicaciónJournal of Physics Condensed Matter
Volumen18
N.º31
DOI
EstadoPublicada - 9 ago. 2006

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