Aspects of emission variation in CdSeTe/ZnS quantum dots conjugated to antibodies

G. Polupan, T. V. Torchynska, J. A.Jaramillo Gomez, J. Douda

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

4 Citas (Scopus)

Resumen

CdSeTe/ZnS quantum dots (QDs) with the emission peak at 705 nm have been studied comparatively in the non-conjugated state and after bioconjugation to anti-pseudo rabies virus antibodies (ABs) by means of photoluminescence (PL) and Raman scattering methods. It is revealed that PL spectra of QDs vary significantly after conjugating to ABs. In PL spectra of non-conjugated QDs only one PL band of Gaussian shape peaked at 1.76–1.78 eV and related to exciton emission in the CdSeTe core has been detected. The PL spectra of bio-conjugated QDs demonstrate the high energy spectral shift and asymmetric shape of PL bands. The study of Raman scattering spectra permits to estimate the CdSeTe alloy composition and to detect the surface enhanced Raman scattering (SERS) effect for bioconjugated QDs. The last fact testifies on the interaction of excitation light electromagnetic field with the electric dipoles excited in ABs. The optical band gap in CdSeTe core has been calculated numerically versus core radius on the base of the effective mass approximation model. Then the energy band diagrams for non-conjugated and bio-conjugated states of CdSeTe/ZnS QDs have been designed. It is revealed the type II quantum well in CdSeTe core that explains the optical transition at 705 nm in the wide band gap CdSeTe alloy. The analysis has shown that AB dipoles excited in bio-conjugated QDs stimulate changing the profile of QD energy band diagram that manifests itself in the mentioned PL spectrum transformations. Actually, the study of PL spectrum varying in CdSeTe/ZnS QDs conjugated to specific antibodies can be an informative tool in biology and medicine for early medical diagnostics.

Idioma originalInglés
Páginas (desde-hasta)7047-7052
Número de páginas6
PublicaciónJournal of Materials Science: Materials in Electronics
Volumen28
N.º10
DOI
EstadoPublicada - 1 may. 2017

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