Analysis of harmonic distortion in graded-channel SOI MOSFETS at high temperatures

M. A. Pavanello; A. Cerdeira; J. A. Martino; M. A. Alemán; D. Flandre

Analysis of harmonic distortion in graded-channel SOI MOSFETS at high temperatures

M. A. Pavanello, A. Cerdeira, J. A. Martino, M. A. Alemán, D. Flandre

Producción científica: Contribución a una conferencia › Artículo › revisión exhaustiva

Resumen

An evaluation of the harmonic distortion in conventional and graded-channel SOI MOSFETs is performed from room temperature up to 423 K. The total harmonic distortion and third order harmonic distortion have been adopted as figures of merit. It is shown that the total harmonic distortion decreases as the length of the lightly doped region is increased in GC transistors, due to reduction of the effective voltage amplitude that is applied on the conventionally doped part of the channel. On the other hand, the third order harmonic distortion increases with the length of lightly doped region. The temperature increase tends to reduce the total harmonic distortion and the third order harmonic.

Idioma original	Inglés
Páginas	39-44
Número de páginas	6
Estado	Publicada - 2004
Publicado de forma externa	Sí
Evento	Microelectronis Technology and Devices, SBMICRO 2004 - Proceedings of the Nineteenth International Symposium - Porto De Galinhas, Pernambuco, Brasil Duración: 7 sep. 2004 → 11 sep. 2004

Conferencia

Conferencia	Microelectronis Technology and Devices, SBMICRO 2004 - Proceedings of the Nineteenth International Symposium
País/Territorio	Brasil
Ciudad	Porto De Galinhas, Pernambuco
Período	7/09/04 → 11/09/04

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

@conference{94ebd827f3fe4b3bad3aa3499b70fa2b,

title = "Analysis of harmonic distortion in graded-channel SOI MOSFETS at high temperatures",

abstract = "An evaluation of the harmonic distortion in conventional and graded-channel SOI MOSFETs is performed from room temperature up to 423 K. The total harmonic distortion and third order harmonic distortion have been adopted as figures of merit. It is shown that the total harmonic distortion decreases as the length of the lightly doped region is increased in GC transistors, due to reduction of the effective voltage amplitude that is applied on the conventionally doped part of the channel. On the other hand, the third order harmonic distortion increases with the length of lightly doped region. The temperature increase tends to reduce the total harmonic distortion and the third order harmonic.",

author = "Pavanello, {M. A.} and A. Cerdeira and Martino, {J. A.} and Alem{\'a}n, {M. A.} and D. Flandre",

year = "2004",

language = "Ingl{\'e}s",

pages = "39--44",

note = "Microelectronis Technology and Devices, SBMICRO 2004 - Proceedings of the Nineteenth International Symposium ; Conference date: 07-09-2004 Through 11-09-2004",

}

Analysis of harmonic distortion in graded-channel SOI MOSFETS at high temperatures. / Pavanello, M. A.; Cerdeira, A.; Martino, J. A. et al.
2004. 39-44 Papel presentado en Microelectronis Technology and Devices, SBMICRO 2004 - Proceedings of the Nineteenth International Symposium, Porto De Galinhas, Pernambuco, Brasil.

Producción científica: Contribución a una conferencia › Artículo › revisión exhaustiva

TY - CONF

T1 - Analysis of harmonic distortion in graded-channel SOI MOSFETS at high temperatures

AU - Pavanello, M. A.

AU - Cerdeira, A.

AU - Martino, J. A.

AU - Alemán, M. A.

AU - Flandre, D.

PY - 2004

Y1 - 2004

N2 - An evaluation of the harmonic distortion in conventional and graded-channel SOI MOSFETs is performed from room temperature up to 423 K. The total harmonic distortion and third order harmonic distortion have been adopted as figures of merit. It is shown that the total harmonic distortion decreases as the length of the lightly doped region is increased in GC transistors, due to reduction of the effective voltage amplitude that is applied on the conventionally doped part of the channel. On the other hand, the third order harmonic distortion increases with the length of lightly doped region. The temperature increase tends to reduce the total harmonic distortion and the third order harmonic.

AB - An evaluation of the harmonic distortion in conventional and graded-channel SOI MOSFETs is performed from room temperature up to 423 K. The total harmonic distortion and third order harmonic distortion have been adopted as figures of merit. It is shown that the total harmonic distortion decreases as the length of the lightly doped region is increased in GC transistors, due to reduction of the effective voltage amplitude that is applied on the conventionally doped part of the channel. On the other hand, the third order harmonic distortion increases with the length of lightly doped region. The temperature increase tends to reduce the total harmonic distortion and the third order harmonic.

UR - http://www.scopus.com/inward/record.url?scp=17044406270&partnerID=8YFLogxK

M3 - Artículo

SP - 39

EP - 44

T2 - Microelectronis Technology and Devices, SBMICRO 2004 - Proceedings of the Nineteenth International Symposium

Y2 - 7 September 2004 through 11 September 2004

ER -

Analysis of harmonic distortion in graded-channel SOI MOSFETS at high temperatures

Resumen

Conferencia

Otros archivos y enlaces

Huella

Citar esto